Abstract
100 µm-wide silicon-on-insulator (SOI) structures have been accomplished by utilizing silicon molecular beam epitaxial (Si-MBE) growth on porous silicon and subsequent lateral-enhanced oxidation of porous silicon through pattern widows. A silicon beam method was used for insitu cleaning of Si surface at 750°C, and the effectiveness of this method was demonstrated by Auger electron spectroscopy and checked by the etch-pit density of the grown film. A two-step growth process of Si MBE was used to grow epitaxial layers of high quality. An electron mobility of 1300 cm2V−1s−1 was obtained by van der Pauw measurements.
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Acknowledgements
The authors would like to acknowledge the support of this work by the U.S. Army Research Office, the Semiconductor Research Corporation and IBM.
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Lin, T.L., Chen, S.C., Wang, K.L. et al. Si-MBE SOI. MRS Online Proceedings Library 53, 193–197 (1985). https://doi.org/10.1557/PROC-53-193
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DOI: https://doi.org/10.1557/PROC-53-193