Abstract
Amorphous silicon TFTs have been realized using several plasma-CVD systems which differ in the conception of the reactor: hot or cold walls, and from the frequency used: 400 kHz and 13.56 MHz. Silicon nitride has been used as insulator. Inverted and direct staggered structures with different channel dimensions (0.5 ⩽ w/L ⩽ 20) are compared. High performance TFTs with mobility from 0.5 to 0.7 cm2v−1s−1 for inverted and from 0.1 to 0.4 cm2V−1s−1 for direct staggered TFTs have been optimized by a full study of the insulator semiconductor and source/drain contact properties.
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References
F. Boulitrop, N. Proust, J. Magarino, E. Criton, J.F. Peray, M. Dupré J. Appl. Phys. 58 (9), 3494–3498 (1985)
M. Le Contellec, B. Vinouze, F. Richou, J.L. Favennec, J. Herrou, S. Salaun, Proceedings of the Eurodisplay’84, Paris, 251–254 (1984)
A.J. Snell, K.D. Mackenzie, W.E. Spear, P.G. Le Comber, Appl. Phys. 24, 357–362 (1981).
M.J. Powell, J.W. Orton, Proceedings of the Materials Research Society Symposium (Europe), Strasbourg, June 5–8, 539–543 (1984)
G.E. Possin, Proceedings of the Eurodisplay’84, Paris, 151–154 (1984).
Acknowledgments
We acknowledge Pr. Solomon and Dr. Schmitt for permitting the use of the SOLEMS reactor for the realization of some of the TFTs.
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Chartier, E., Szydlo, N., Boulitrop, F. et al. Dependence of a-Si:H TFTs Performances on Deposition and Process Parameters. MRS Online Proceedings Library 53, 453–458 (1985). https://doi.org/10.1557/PROC-53-453
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DOI: https://doi.org/10.1557/PROC-53-453