Skip to main content
SpringerLink
Log in

Aggressively Scaled P-Channel Mosfets With Stacked Nitride-Oxide-Nitride, N/O/N, Gate Dielectrics

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Ultrathin (tox, eq < 2.0 nm) Si3N4/SiO2(hereafter N/O) gate dielectrics with improved interface characteristics compared to devices with thermal oxides have been formed by remote plasma enhanced CVD of Si3N4onto oxides. If the Si-Si02 interface is intentionally nitrided prior to the Si3N4deposition, the increased physical thickness of the N/O stack combined with the interfacial nitridation reduces the direct tunneling current by more than two orders of magnitude. The ensuing device structure can then be characterized as N/O/N. The top nitride layer is also an effective boron diffusion barrier improving short channel characteristics in p+-poly PMOSFETs. In addition, nitrogen can also be transported to the silicon/dielectric interface during post-deposition RTAs, and this reduces degradation of transconductance during hot carrier stressing.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. G. Hu and R. Bruce, IEEE Trans. Elec. Dev. ED-32, 584 (1985).

  2. S. Wolf, Silicon procession for the VLSI Era, Vol. 3, Lattice Press, Sunset Beach, CA, p. 311, (1995).

    Google Scholar 

  3. J. Pfiester and F. Baker, IEEE Elec. Dev. Lett. 11, 247 (1990).

    Article  CAS  Google Scholar 

  4. T. Mogami, L. Johansson, I. Sakai, and M. Fukuma, IEDM Tech. Dig. 533 (1991).

  5. E. Vogel, P. McLarty, and J. Wortman, IEEE Tran. Elec. Dev. ED- 43, 753 (1996).

    Article  CAS  Google Scholar 

  6. Y. Wu and G. Lucovsky, IEEE International Reliability Physics Symposium 70, (1998).

  7. S. Lo, D. Buchanan, Y. Taur, and W. Wang, IEEE Elec. Dev. Lett. 18, 209 (1997).

    Article  CAS  Google Scholar 

  8. G. Alers, D. Werder, and Y. Chabal, Appl. Phys. Lett 73, 1517 (1998).

    Article  CAS  Google Scholar 

  9. K. Hubbard and D. Schlom, J. Mater. Res. 11, 2757 (1996).

    Article  CAS  Google Scholar 

  10. C. Parker, G. Lucovsky, and J. Hauser, IEEE Elec. Dev. Lett. 19, 106 (1998).

    Article  CAS  Google Scholar 

  11. Y. Ma, T. Yasuda, and G. Lucovsky, Appl. Phys. Lett. 64, 2226 (1994).

    Article  CAS  Google Scholar 

  12. S.V Hattangady, H. Niimi and G. Lucovsky, J. Vac. Sci. Technol. A 14, 3017 (1996).

    Article  CAS  Google Scholar 

  13. S.V. Hattangady, H. Niimi, and G. Lucovsky, Appl. Phys. Lett. 66, 3495 (1995).

    Article  CAS  Google Scholar 

  14. Y. Wu and G. Lucovsky, IEEE Elec. Dev. Lett 19, 367 (1998).

    Article  CAS  Google Scholar 

  15. J. Hauser, IEEE TED, 44, 1009 (1997)

    Article  CAS  Google Scholar 

  16. M. L. Green et al., Appl. Phys. Lett. 65, 848, (1994).

    Article  CAS  Google Scholar 

  17. D. Wristers, L. Han, and D. Kwong, Appl. Phys. Lett. 68, 2094 (1996).

    Article  CAS  Google Scholar 

  18. G. Lucovsky et al., Appl. Phys. Lett. 74 (April 5, 1999).

  19. H. Yang, H. Niimi, Y. Wu and G. Lucovsky, submitted to IEEE Elec. Dev. Lett. (1999).

Download references

Author information

Authors and Affiliations

  1. Departments of Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC, 27695-8202, USA

    Yider Wu & Gerald Lucovsky

Authors
  1. Yider Wu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Gerald Lucovsky
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Wu, Y., Lucovsky, G. Aggressively Scaled P-Channel Mosfets With Stacked Nitride-Oxide-Nitride, N/O/N, Gate Dielectrics. MRS Online Proceedings Library 567, 101–106 (1999). https://doi.org/10.1557/PROC-567-101

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-567-101

Search

Navigation