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The Effects of Interfacial Suboxide Transition Regions on Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics

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Abstract

Mesarjian et al. were the first to recognize the effects of suboxide interfacial transition regions at Si-SiO2 interfaces on tunneling oscillations in the Fowler-Nordheim regime. This paper extends these ideas to the direct tunneling regime and focuses on differences in interfacial transition regions between Si-SO2 interfaces with, and without monolayer level interface nitridation. Tunneling currents in both the direct and Fowler-Nordheim tunneling regimes are reduced by monolayer level interface nitridation for PMOS and NMOS devices with the same oxide-equivalent thickness. This paper develops a modified barrier layer model based on analysis of XPS results that accounts for these reductions in current in the direct tunneling regime.

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Authors and Affiliations

  1. Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695-8202, USA

    H. Yang, H. Niimi, Y. Wu & G. Lucovsky

Authors
  1. H. Yang
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  2. H. Niimi
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  3. Y. Wu
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  4. G. Lucovsky
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Yang, H., Niimi, H., Wu, Y. et al. The Effects of Interfacial Suboxide Transition Regions on Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics. MRS Online Proceedings Library 567, 241–246 (1999). https://doi.org/10.1557/PROC-567-241

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  • DOI: https://doi.org/10.1557/PROC-567-241

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