Abstract
SiC MESFET’s have shown an RF power density of 4.6 W/mm at 3.5 GHz and a power added efficiency of 60% with 3 W/mm at 800 MHz, demonstrating that SiC devices are capable of very high power densities and high efficiencies. Single devices with 48 mm of gate periphery were mounted in a hybrid circuit and achieved a maximum RF power of 80 watts CW at 3.1 GHz with 38% PAE.
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Allen, S.T., Sheppard, S.T., Pribble, W.L. et al. Recent Progress in SiC Microwave MESFETs. MRS Online Proceedings Library 572, 15 (1999). https://doi.org/10.1557/PROC-572-15
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DOI: https://doi.org/10.1557/PROC-572-15