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Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique

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Abstract

The electrical properties of thick oxide layers onn andp-type 6H-SiC obtained by a depoconversion technique are presented. High frequency capacitance-voltage measurements on MOS capacitors with a ~ 3000 Å thick oxide indicates an effective charge density comparable to that of MOS capacitors with thermal oxide. The breakdown field of the depo-converted oxide obtained using a ramp response technique indicates a good quality oxide with average values in excess of 6 MV/cm on p-type SiC and 9 MV/cm onn-type SiC. The oxide breakdown field was observed to decrease with increase in MOS capacitor diameter.

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Authors and Affiliations

  1. Department of Electrical Engineering, University of South Carolina, SC, 29208, USA

    Q. Zhang, V. Madangarli, I. Khlebnikov, S. Soloviev & T. S. Sudarshan

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  1. Q. Zhang
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  2. V. Madangarli
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  3. I. Khlebnikov
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  4. S. Soloviev
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  5. T. S. Sudarshan
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Correspondence to Q. Zhang.

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Zhang, Q., Madangarli, V., Khlebnikov, I. et al. Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique. MRS Online Proceedings Library 572, 57 (1999). https://doi.org/10.1557/PROC-572-57

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  • DOI: https://doi.org/10.1557/PROC-572-57

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