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Microstructural Characterization of Antimonide Based III-V Compounds and their Effect on Electro-Optical Properties of Substrate Materials and Devices

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This paper presents some of the widely used characterization tools for antimonide based III-V compounds, focusing on characterization of defects that limit device operation. The effect of microstructure on the electro-optical properties of GaSb and GaInAsSb important in devices is emphasized.

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Authors and Affiliations

  1. Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA

    P. S. Dutta & R. J. Gutmann

  2. Lockheed Martin Inc., Schenectady, NY, 12301, USA

    G. W. Charache

  3. MIT Lincoln Laboratory, Lexington, MA, 02420-9108, USA

    C. A. Wang

Authors
  1. P. S. Dutta
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  2. R. J. Gutmann
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  3. G. W. Charache
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  4. C. A. Wang
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Dutta, P.S., Gutmann, R.J., Charache, G.W. et al. Microstructural Characterization of Antimonide Based III-V Compounds and their Effect on Electro-Optical Properties of Substrate Materials and Devices. MRS Online Proceedings Library 588, 187 (1999). https://doi.org/10.1557/PROC-588-187

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  • DOI: https://doi.org/10.1557/PROC-588-187

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