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Aspects of Gas Phase Chemistry During Chemical Vapor Deposition of Ti−Si−N Thin Films With Ti(NMe2)4 (TDMAT), NH3, and SiH4

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Abstract

Silane activation, predominantly in the gas phase, has been observed during the chemical vapor deposition of Ti-Si-N thin films using Ti(NMe2)4, tetrakis(dimethylamido)titanium, silane, and ammonia at 450°C, using molecular beam mass spectrometry. The extent of silane reactivity was dependent upon the relative amounts of Ti(NMe2)4and NH3. Additionally, each TDMAT molecule activates multiple silane molecules. Ti-Si-N thin films were deposited using similar process conditions as the molecular beam experiments, and RBS and XPS were used to determine their atomic composition. The variations of the Ti:Si ratio in the films as a function of Ti(NMe2)4 and NH3 flows were consistent with the changes in silane reactivity under similar conditions.

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References

  1. P. M. Smith and J. S. Custer, Appl. Phys. Lett. 70, 3116 (1997).

    Article  CAS  Google Scholar 

  2. J. S. Reid, Amorphous ternary diffusion barriers for silicon metallizations. Ph.D. Thesis, California Institute of Technology, May, 1995.

    Google Scholar 

  3. (a) X. Sun, J. S. Reid, E. Kolawa, and M. A. Nicolet, J. Appl. Phys. 81, 656 (1997).

    Article  CAS  Google Scholar 

  4. X. Sun, J.S. Reid, E. Kolawa, and M.A. Nicolet, J. Appl. Phys. 81, 664 (1997).

    Article  CAS  Google Scholar 

  5. I. J. Raaijmakers, Thin Solid Films 247, 85 (1994).

    Article  CAS  Google Scholar 

  6. K. Sugiyama, P. Sangryul Pac, Y. Takahashi, and S. Motojima, J. Electrochem. Soc., 122, 1545 (1975).

    Article  CAS  Google Scholar 

  7. (a) R. M. Fix, R. G. Gordon, and D. M. Hoffman, Chem. Mater. 2, 235 (1990).

    Article  CAS  Google Scholar 

  8. R.M. Fix, R.G. Gordon, and D.M. Hoffman, Chem. Mater. 3, 1138 (1991).

    Article  CAS  Google Scholar 

  9. J.M. Musher and R.G. Gordon, J. Mater. Res. 11, 989 (1996).

    Article  CAS  Google Scholar 

  10. J.M. Musher and R.G. Gordon, J. Electrochem. Soc., 143, 736 (1996).

    Article  CAS  Google Scholar 

  11. D.M. Hoffman, Polyhedron, 13, 1169 (1994).

    Article  CAS  Google Scholar 

  12. (a) A. Katz, A. Feingold, S. J. Pearton, S. Nakahara, M. Ellington, U. K. Chakrabarti, M. Geva, and E. Lane, J. Appl. Phys. 70, 3666 (1991).

    Article  CAS  Google Scholar 

  13. A. Katz, A. Feingold, S. Nakahara, S.J. Pearton, E. Lane, M. Geva, F.A. Stevie, and K. Jones, J. Appl. Phys. 15, 993 (1992).

    Article  Google Scholar 

  14. S. C. Sun and M. H. Tsai, Thin Solid Films, 253, 440 (1994).

    Article  CAS  Google Scholar 

  15. A. Paranjpe. and M. IslamRaja, J. Vac. Sci. Technol. B., 13, 2105 (1995).

    Article  CAS  Google Scholar 

  16. C. M. Truong, P. J. Chen, J. S. Corneille, W. S. Oh, and D. W. Goodman, J. Phys. Chem. 99, 8831 (1995).

    Article  CAS  Google Scholar 

  17. (a) L. H. Dubois, B. R. Zegarski, and G. S. Girolami, J. Electrochem. Soc. 139, 3603 (1992).

    Article  CAS  Google Scholar 

  18. J.A. Prybyla, C.-M. Chiang, and L.H. Dubois, J. Electrochem. Soc. 140, 2695 (1993).

    Article  CAS  Google Scholar 

  19. L.H. Dubois, Polyhedron 13, 1329 (1994).

    Article  CAS  Google Scholar 

  20. (a) B. H. Weiler, Chem. Mater. 7, 1609 (1995). (b) B.H. Weiler, J. Am. Chem. Soc. 118, 4975 (1996).

    Article  Google Scholar 

  21. H. O. Pierson, Handbook of Chemical Vapor Deposition: Principles, Technology and Applications, (Noyes Publications: Park Ridge, New Jersey, 1992).

    Google Scholar 

  22. (a) T. R. Cundari, J. Am. Chem. Soc. 114, 10557 (1992). (b) T.R. Cundari and M.S. Gordon, J. Am. Chem. Soc. 115, 4210 (1993). (c) T.R. Cundari, and J.M. Morse, Chem. Mater. 8, 189 (1996).

    Article  CAS  Google Scholar 

  23. (a) C. H. Winter, P. H. Sheridan, T. S. Lewkebandara, M. J. Heeg, and J. W. Proscia, J. Am. Chem. Soc., 114, 1095 (1992). (b) T.S. Lewkebandara, P.H. Sheridan, M.J. Heeg, A.L. Rheingold, and C.H. Winter, Inorg. Chem. 33, 5879 (1994).

    Article  CAS  Google Scholar 

  24. J. E. Hill, R. D. Profilet, P. E. Fanwick, I. P. Rothwell, Angew. Chem. Int. Ed. Engl., 29, 664 (1990).

    Article  Google Scholar 

  25. H. W. Roesky, H. Voelker, M. Witt, and M. Noltemeyer, Angew. Chem. Int. Ed. Engl., 29, 669 (1990).

    Article  Google Scholar 

  26. C. C. Cummins, C. P. Schaller, Van G. D. Duyne, P. T. Wolczanski, A. W. E. Chan, and R. Hoffman, J. Am. Chem. Soc. 113, 2985 (1991).

    Article  CAS  Google Scholar 

  27. W. A. Nugent, and B. L. Haymore, Coordination Chem. Rev. 31, 123 (1980).

    Article  CAS  Google Scholar 

  28. W. A. Nugent, and R. L. Harlow, J.C.S. Chem. Comm., 579 (1978).

  29. C. C. Cummins, S. M. Baxter, and P. T. Wolczanski J. Am. Chem. Soc. 110, 8731 (1988).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Materials Science Program, University of New Hampshire, Durham, NH, 03824, USA

    Carmela Amato-Wierda & Edward T. Norton Jr.

  2. Visiting scientist, Department of Chemistry, Saint Anselm College, Manchester, NH, 03102, USA

    Derk A. Wierda

Authors
  1. Carmela Amato-Wierda
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  2. Edward T. Norton Jr.
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  3. Derk A. Wierda
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Correspondence to Carmela Amato-Wierda.

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Amato-Wierda, C., Norton, E.T. & Wierda, D.A. Aspects of Gas Phase Chemistry During Chemical Vapor Deposition of Ti−Si−N Thin Films With Ti(NMe2)4 (TDMAT), NH3, and SiH4. MRS Online Proceedings Library 606, 97 (1999). https://doi.org/10.1557/PROC-606-97

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