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Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

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Abstract

Indium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

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Authors and Affiliations

  1. Hosono Transparent ElectroActive Materials, ERATO, JST, KSP C-1232, 3-3-1 Sakado, Takatsu, Kawasaki, 213-0012, Japan

    Hiromichi Ohta, Masahiro Orita & Masahiro Hirano

  2. Materials and Structures Laboratory,Tokyo Institute of Technology, Nagatsuda, Midori-ku, Yokohama, 226-8503, Japan

    Hideo Hosono

Authors
  1. Hiromichi Ohta
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  2. Masahiro Orita
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  3. Masahiro Hirano
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  4. Hideo Hosono
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Ohta, H., Orita, M., Hirano, M. et al. Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface. MRS Online Proceedings Library 666, 315 (2000). https://doi.org/10.1557/PROC-666-F3.15

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  • DOI: https://doi.org/10.1557/PROC-666-F3.15

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