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Prospects for the Mott Transition Field Effect Transistor

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Abstract

We have been investigating the potential for a channel transistor which utilizes a perovskite oxide capable of undergoing the Mott metal-insulator transition as the channel material. Our experiments have identified three limitations to the performance of the oxide devices: contact resistance to the channel, mobility limitations due to polycrystalline channels, and inadequate field induced surface charge density. In this paper we review progress we have made in oxide electrodes and in improving channel growth conditions which have mitigated the limitations due to contact resistance and polycrystalline channels. We conclude with an outline of our approach to improving the field induced surface charge density.

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Authors and Affiliations

  1. IBM Research, T.J. Watson Research Center, Yorktown Heights, NY, 10598, USA

    J. A. Misewich & A. G. Schrott

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  1. J. A. Misewich
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  2. A. G. Schrott
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Misewich, J.A., Schrott, A.G. Prospects for the Mott Transition Field Effect Transistor. MRS Online Proceedings Library 666, 47 (2000). https://doi.org/10.1557/PROC-666-F4.7

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  • DOI: https://doi.org/10.1557/PROC-666-F4.7

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