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Cross-Plane Thermoelectric Properties in Si/Ge Superlattices

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Abstract

In this paper, a set of methods is developed to measure the Seebeck coefficient, electrical conductivity, and thermal conductivity in the cross-plane direction of thin films. The method employs microfabricated heaters, voltage and temperature sensors, and phase-lock amplifiers to determine the temperature and Seebeck voltage oscillation in the cross-plane direction of the samples, from which the thermal conductivity and Seebeck coefficient of thin films are determined simultaneously. The cross-plane electrical conductivity is also measured by a modified transmission line model. These methods are applied to Si/Ge superlattices grown by molecular beam epitaxy.

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Authors and Affiliations

  1. Mechanical and Aerospace Engineering Department, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    Bao Yang

  2. Electrical Engineering Department, University of California, Los Angeles, CA, 90095, USA

    Jian L. Liu & Kang L. Wang

  3. Mechanical Engineering Department, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    Gang Chen

Authors
  1. Bao Yang
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  2. Jian L. Liu
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  3. Kang L. Wang
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  4. Gang Chen
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Yang, B., Liu, J.L., Wang, K.L. et al. Cross-Plane Thermoelectric Properties in Si/Ge Superlattices. MRS Online Proceedings Library 691, 32 (2001). https://doi.org/10.1557/PROC-691-G3.2

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  • DOI: https://doi.org/10.1557/PROC-691-G3.2

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