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XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFTs

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Abstract

Mo-gate n-channel poly-Si TFTs have been fabricated for the first time at a low processing temperature of 260°C. 500 to 1000A thick a-Si:H was successfully crystallized by pulsed XeCl excimer laser (308nm) annealing without heating the glass substrate. The channel mobility of the TFT was 180 cm2/V.sec when the a-Si:H was annealed at energy density of 200 mJ/cm2.

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Authors and Affiliations

  1. Sony Corporation Research Center, Yokohama, 240, Japan

    T. Sameshima & S. Usui

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  1. T. Sameshima
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  2. S. Usui
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Sameshima, T., Usui, S. XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFTs. MRS Online Proceedings Library 71, 435–440 (1986). https://doi.org/10.1557/PROC-71-435

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  • DOI: https://doi.org/10.1557/PROC-71-435

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