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The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors

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Abstract

In this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.

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Authors and Affiliations

  1. Department of Electrical Engineering, North Carolina State University, 1010 Man Campus Drive, Raleigh, NC, 27695-7920, USA

    You-Seok Suh, Greg Heuss, Jae-Hoon Lee & Veena Misra

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  1. You-Seok Suh
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  2. Greg Heuss
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  3. Jae-Hoon Lee
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  4. Veena Misra
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Suh, YS., Heuss, G., Lee, JH. et al. The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors. MRS Online Proceedings Library 716, 86 (2001). https://doi.org/10.1557/PROC-716-B8.6

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  • DOI: https://doi.org/10.1557/PROC-716-B8.6

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