Abstract
Si/Ge multilayer structures formed by the deposition of relatively small amounts of Ge layers (less then the critical thickness for 3D islands formation) are obtained by molecular beam epitaxy. Their structural and optical properties are investigated in detail. Appropriate growth parameter of the stacked island structures lead to significant increasing of the luminescence efficiency even at room temperature.
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Cirlin, G.E., Zakharov, N.D., Werner, P. et al. Structural and Optical Properties of the Multilayer Structures Formed by Ge Sub-Critical Insertions in a Si Matrix. MRS Online Proceedings Library 717, 44 (2002). https://doi.org/10.1557/PROC-717-C4.4
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DOI: https://doi.org/10.1557/PROC-717-C4.4