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Temperature Dependence of Ion Mixing Of Markers in Zr

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Abstract

Ion mixing of thin markers in Zr was investigated by irradiating with 660 keV Kr++ ions at temperatures between 300 to 423 K. Very thin films of vacuum evaporated Ti, Cr, Fe, Co, Ni, Cu+ Hf, W, and Au served as markers. The samples were analyzed by 2 MeV He backscattering spectrometry. The marker elements that are likely to dissolve interstitially in Zr have higher mixing efficiencies at elevated irradiation temperature than the markers that are likely to dissolve substitutionally. The results are explained by radiation-enhanced diffusion theory.

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Author notes

  1. R. S. Averback

    Present address: Department of Materials Science, University of Illinois Urbana-Champaign, IL, 61801, Urbana, USA

Authors and Affiliations

  1. Department of Electrical Engineering, California Institute of Technology, CA, 91125, Pasadena, USA

    S.-J. Kim & M.-A. Nicolet

  2. Argonne National Laboratory, Material Science Division, IL, 60439, Argonne, USA

    R. S. Averback

Authors
  1. S.-J. Kim
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  2. M.-A. Nicolet
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  3. R. S. Averback
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Kim, SJ., Nicolet, MA. & Averback, R.S. Temperature Dependence of Ion Mixing Of Markers in Zr. MRS Online Proceedings Library 74, 437 (1986). https://doi.org/10.1557/PROC-74-437

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  • DOI: https://doi.org/10.1557/PROC-74-437

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