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Four Current Examples of Characterization of Silicon Carbide

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Abstract

A description is given of the profiling of CVD grown 3C SiC on undulant (001) Si using low temperature photoluminescence (LTPL). Inelastic neutron scattering (INS) and X-ray Raman scattering (XRS) are compared for acoustical modes of 4H SiC. Schottky barrier heights are obtained for 4H and 6H SiC on different crystal faces using three different measuring techniques. Scanning electron microscopy (SEM) is used to display a variety of porous SiC morphologies achieved in n-type and p-type SiC.

This paper is intended to be the introduction to the “CHARACTERIZATION” section of this volume. To serve this purpose we illustrate the subject matter with new results using four distinct experimental techniques.

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Authors and Affiliations

  1. Dept. of Physics and Astronomy, Univ. of Pittsburgh, Pittsburgh, PA, 15260, USA

    S. Bai, Yue Ke, Y. Shishkin, O. Shigiltchoff, R. P. Devaty & W. J. Choyke

  2. Institut für Theoretische Physik, Universität Regensburg, Regensburg, 93040, Germany

    D. Strauch & B. Stojetz

  3. Institut Laue-Langevin, Grenoble, 38042, France

    B. Dorner

  4. Cree, Inc, 4600 Silicon Drive, Durham, NC, 27703, United States

    D. Hobgood

  5. Max-Planck-Institut, Heisenbergstrasse 1, Stuttgart, 70569, Germany

    J. Serrano & M. Cardona

  6. Hoya Advanced Semiconductor Technologies Co. Ltd, Kanagawa, 229-1125, Japan

    H. Nagasawa

  7. Dept. of Electronic Science & Engineering, Kyoto University, Kyoto, 606-01, Japan

    T. Kimoto

  8. Dept. of Mat. Sci, Carnegie Mellon Univ, Pittsburgh, PA, 15213, USA

    L. M. Porter

Authors
  1. S. Bai
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  2. Yue Ke
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  3. Y. Shishkin
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  4. O. Shigiltchoff
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  5. R. P. Devaty
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  6. W. J. Choyke
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  7. D. Strauch
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  8. B. Stojetz
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  9. B. Dorner
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  10. D. Hobgood
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  11. J. Serrano
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  12. M. Cardona
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  13. H. Nagasawa
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  14. T. Kimoto
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  15. L. M. Porter
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Bai, S., Ke, Y., Shishkin, Y. et al. Four Current Examples of Characterization of Silicon Carbide. MRS Online Proceedings Library 742, 31 (2002). https://doi.org/10.1557/PROC-742-K3.1

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  • DOI: https://doi.org/10.1557/PROC-742-K3.1

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