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SiO2/SiC Interface Properties on Various Surface Orientations

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Abstract

The interface properties of MOS capacitors and MOSFETs were characterized using the (0001), (1120), and (0338) faces of 4H-SiC. (0001) and (1120) correspond to (111) and (110) in cubic structure. (0338) is semi-equivalent to (100). The interface states near the conduction band edge are discussed based on the capacitance and conductance measurements of n-type MOS capacitors at a low temperature and room temperature. The (0338) face indicated the smallest interface state density near the conduction band edge and highest channel mobility in n-channel MOSFETs among these faces.

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Authors and Affiliations

  1. Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara, 630-0101, Japan

    Hiroshi Yano

  2. Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto 606-8501, Japan

    Taichi Hirao, Tsunenobu Kimoto & Hiroyuki Matsunami

Authors
  1. Hiroshi Yano
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  2. Taichi Hirao
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  3. Tsunenobu Kimoto
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  4. Hiroyuki Matsunami
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Yano, H., Hirao, T., Kimoto, T. et al. SiO2/SiC Interface Properties on Various Surface Orientations. MRS Online Proceedings Library 742, 45 (2002). https://doi.org/10.1557/PROC-742-K4.5

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  • DOI: https://doi.org/10.1557/PROC-742-K4.5

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