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Reactive Solid-Phase Epitaxy

A novel growth method for single-crystalline thin films of complex oxides with superlattice structure

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Abstract

We have developed a novel growth method for single-crystalline film of natural superlattice oxides and named the method “Reactive Solid-Phase Epitaxy (R-SPE).” Single-crystalline thin films of homologous series In-GaO3(ZnO)m (m=integer) are fabricated by the R-SPE method and its growth mechanism, especially a role of ZnO epitaxial layer, is clarified. High-temperature annealing of bi-layer films consisting of an amorphous InGaO3(ZnO)5 layer deposited at room temperature and an epitaxial ZnO layer on YSZ substrate allows for the growth of single-crystalline film with a controlled chemical composition. The ZnO layer plays an essential role in determining the crystallographic orientation, while the thickness ratio between the two layers controls the film composition.

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Authors and Affiliations

  1. Hosono Transparent ElectroActive Materials, ERATO, JST, 3-2-1 Sakado, Takatsu, Kawasaki, 213-0012, Japan

    H. Ohta, H. Hiramatsu, M. Orita & M. Hirano

  2. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226-8503, Japan

    K. Nomura, K. Ueda & H. Hosono

  3. Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta, Nagoya, 456-0023, Japan

    T. Suzuki

  4. Engineering Research Institute, University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo, 113-8656, Japan

    Y. Ikuhara

Authors
  1. H. Ohta
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  2. K. Nomura
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  3. H. Hiramatsu
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  4. T. Suzuki
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  5. K. Ueda
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  6. M. Orita
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  7. M. Hirano
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  8. Y. Ikuhara
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  9. H. Hosono
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Ohta, H., Nomura, K., Hiramatsu, H. et al. Reactive Solid-Phase Epitaxy. MRS Online Proceedings Library 747, 25 (2002). https://doi.org/10.1557/PROC-747-V2.5

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  • DOI: https://doi.org/10.1557/PROC-747-V2.5

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