Abstract
Dry etching of fused SiO2 in the presence of several etchants using CO2 and CO2 + Ar+ lasers yields controlled, rapid removal rates of 10 A○ - 500 µm/sec and saooth, high quality surfaces. Etching occurs mainly by thermal ablation of SiO2 due to strong CO2 laser absorption. The addition of the Ar+ laser, which is absorbed by Br2 etchant to yield Br atoms, increases the etch rate as a result of a combination of photochemical and gas-phase heating effects.
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Pan, D., Dai, B.T., Agrawalla, B.S. et al. Etching of SiO2 with CO2 and CO2 + Ar+ Lasers. MRS Online Proceedings Library 75, 395–401 (1986). https://doi.org/10.1557/PROC-75-395
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DOI: https://doi.org/10.1557/PROC-75-395