Abstract
The dependence of the spontaneous emission lifetime of excitons in InGaN/GaN quantum disks (QDs) on the crystalline orientation is calculated. For 1-nm-thick QDs, it is found that the lifetime in the conventional c-oriented QDs is ten times as long as that in QDs tilted by 30° and 90°, and that the difference is pronounced by increasing the QDs thickness. This is totally due to the presence of the electric field in strained InGaN. Taking into account our preceding study, in which it was revealed that GaN on GaAs(114) was titled by 30°, we propose the use of GaAs(114) as a substrate for nitride light emitting devices to improve the optical transition probability.
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Acknowledgments
The authors thank Prof. Kawakami and Dr. Kaneta for providing their valuable data. This work is partially supported by the 21st Century COE Program (No. 14213201) and Grants for Regional Science and Technology Promotion from the Ministry of Education, Culture, Sports, Science, and Technology.
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Funato, M., Kawaguchi, Y. & Fujita, S. Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells. MRS Online Proceedings Library 798, 86–91 (2003). https://doi.org/10.1557/PROC-798-Y10.12
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DOI: https://doi.org/10.1557/PROC-798-Y10.12