Abstract
The hydrostatic pressure dependence of the optical transitions in InN, In-rich In1−xGaxN (0 < x < 0.5) and In1−xAlxN (x = 0.25) alloys is studied using diamond anvil cells. The absorption edges and the photoluminescence peaks shift to higher energy with pressure. The pressure coefficient of InN is determined to be 3.0±0.1 meV/kbar. Together with previous experimental results, our data suggest that the pressure coefficients of group-III nitride alloys have only a weak dependence on the alloy composition. Photoluminescence gives much smaller pressure coefficients, which is attributed to emission involving highly localized states. This indicates that photoluminescence might not be an accurate method to study the pressure dependence of the fundamental bandgaps of group III-nitrides.
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Acknowledgments
The work at the Lawrence Berkeley National Laboratory is supported by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098. The work at Cornell University is supported by ONR under Contract No. N000149910936.
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Li, S.X., Wu, J., Walukiewicz, W. et al. Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys. MRS Online Proceedings Library 798, 301–306 (2003). https://doi.org/10.1557/PROC-798-Y12.9
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DOI: https://doi.org/10.1557/PROC-798-Y12.9