Abstract
Growth conditions, structural and optical properties of GaN quantum dots (QDs) grown by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio value and on growth temperature, the growth mode of GaN deposited on AlN can be either of the Stranski-Krastanow or of the Frank-Van der Merwe type. It will be shown that vertical correlation results in a red shift and in a narrowing of the photoluminescence spectra.
Growth of Eu-doped GaN quantum dots embedded in AlN will be described. Intense photoluminescence associated with Eu has been measured, with no GaN band-edge emission, as an evidence that carrier recombination mostly occurs through rare earth ion excitation. Persistent photoluminescence of Eu-doped GaN quantum dots as a function of temperature has been put in evidence, as a further confirmation of the recombination of confined carriers through Eu ion excitation.
Similar content being viewed by others
References
Y. Arakawa, H. Sakaki, Appl. Phys. Lett. 40, 939 (1982)
L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, and G. Le Roux, Appl. Phys. Lett. 47, 1099 (1985)
S. Guha, A. Madhukar, and C. Rajkuma, Appl. Phys. Lett. 57, 2110 (1990).
J. M. Moison, F. Houzay, F. Barthe, L. Leprince, E. André, and O. Vatel, Appl. Phys. Lett. 64, 196 (1994)
S. Varma, C. M. Reaves, V. Bressler-Hill, S‥ Den Baars, and W. H. Weinberg, Surf. Sci. 393, 24 (1997)
D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990)
Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett. 65, 1020 (1990)
B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, and J.L. Rouvière, Phys. Rev. B 56, 7069 (1997)
F. Widmann, B. Daudin, G. Feuillet, Y. Samson, J. L. Rouvière, and N. Pelekanos, J. Appl. Phys. 83, 7618 (1998)
N. Grandjean and J. Massies Appl. Phys. Lett. 71, 1816 (1997)
S. Tanaka, S. Iwai, and Y. Aoyagi, Appl. Phys. Lett. 69, 4096 (1996)
X. Q. Shen, S. Tanaka, S. Iwai, and Y. Aoyagi, Appl. Phys. Lett. 72, 344 (1998)
P. Ramvall, P. Riblet, S. Nomura, and Y. Aoyagi, J. Appl. Phys. 87, 3883 (2000)
M. Miyamura, K. Tachibana, and Y. Arakawa, Appl. Phys. Lett. 80, 3937 (2002)
T. Shibata, K. Asai, T. Nagai, S. Sumiya, M. Tanaka, O. Oda, H. Miyake, and K. Hiramatsu, 2002 Mat. Res. Soc. Symp. Proc. 693, 541
C. Adelmann, J. Brault, D. Jalabert, P. Gentile, H. Mariette, G. Mula, B. Daudin, J. Appl. Phys., 91, 9638 (2002)
B. Heying, I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, S. DenBaars, U. Mishra, and J. S. Speck, Appl. Phys. Lett. 77, 2885 (2000)
Guido Mula, C. Adelmann, S. Moehl, J. Oullier and B. Daudin, Phys. Rev. B 64, 195406 (2001)
R.E. Rudd, G.A.D. Briggs, A. P. Sutton, G. Medeiros-Ribeiro and R.S. Williams, Phys. Rev. Lett. 90, 146101 (2003)
C. Adelmann, B. Daudin, R. A. Oliver, G. A. D. Briggs and R.E. Rudd, unpublished
E. Bellet-Amalric, C. Adelmann, E. Sarigiannidou, J. L. Rouvière, G. Feuillet, E. Monroy, and B. Daudin, J. Appl. Phys., in press
C. Adelmann, N. Gogneau, E. Sarigiannidou, J. L. Rouvière, and B. Daudin, Appl. Phys. Lett. 81, 3064 (2002)
N. Gogneau, D. Jalabert, E. Monroy, and B. Daudin, J. Appl. Phys. 94, 2254 (2003)
J. L. Rouvière, J. Simon, N. Pelekanos, B. Daudin and G. Feuillet, Appl. Phys. Lett. 75, 2632 (1999)
T. Zywietz, J. Neugebauer and M. Scheffler, Appl. Phys. Lett. 73, 487 (1998)
V. Chamard, T. H. Metzger, M. Sztucki, V. Holy, M. Tolan, E. Bellet-Amalric, C. Adelmann, B. Daudin and H. Mariette, Europhysics Letters, 63, 268 (2003)
Q. Xie, A. Madukhar, P. Chen and N. P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995)
F. Liu, S. E. Davenport, H. M. Evans and M. G. Lagally, Phys. Rev. Lett. 82, 2528 (1999)
M. Arlery, J.L. Rouvière, F. Widmann, B. Daudin, G. Feuillet and H. Mariette, Appl. Phys. Lett. 74, 3287 (1999)
M. J. Hÿtch, E. Snoeck and R. Kilaas, Ultramicroscopy 74, 131 (1998)
J. Simon, N.T. Pelekanos, C. Adelmann, E. Martinez-Guerrero, R. André, B. Daudin, Le Si Dang and H. Mariette, Phys. Rev. B 67, 205315 (2003)
N. Gogneau, F. Fossard, E. Monroy, S. Monnoye, H. Mank and B. Daudin, unpublished
D. S. Lee, A. J. Steckl, Appl. Phys. Lett. 81, 2331 (2002)
Shinichi Morishima, Takahiro Maruyama, Katsuhiro Akimoto, J. Cryst. Growth 209, 378 (2000)
S. Morishima, T. Maruyama, M. Tanaka, Y. Masumoto, K. Akimoto, Phys. Stat. Sol. a 176, 113 (1999)
K. Hara, N. Ohtake, K. Ishii, Phys. Stat. Sol. b 216, 625 (1999)
A. J. Steckl, M. Garter, D. S. Lee, J. Heiken feld, R. Birkhahn, Appl. Phys. Lett. 75, 2184 (1999)
H. J. Lozykowski, M. Jadwisienczak, I. Brown, Appl. Phys. Lett. 74, 1129 (1999)
Zhiqiang Li, Hyungjin Bang, Guanxi Piao, Junji Sawahata, Katsuhiro Akimoto, J. Cryst. Growth 240, 382 (2002)
Hyungjin Bang, Shinichi Morishima, Zhiqiang Li, Katsuhiro Akimoto, Masahura Nomura, Eichi Yagi, J. Cryst. Growth 237–239, 1027 (2002)
Y. Hori, X. Biquard, F. Enjalbert, E. Monroy, D. Jalabert, Le Si Dang, M. Tanaka, O. Oda and B. Daudin, Appl. Phys. Lett., in press
Ei Ei Nyein, U. Hömmerich, J. Heikenfeld, D. S. Lee, A. Steckl, J. M. Zavada, Appl. Phys. Lett. 82, 1655 (2003)
Acknowledgments
The authors would like to acknowledge Y. Cure, Y. Genuist and M. Terrier for technical assistance. We are grateful to the company Novasic for polishing of (0001) SiC.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Daudin, B., Gogneau, N., Adelmann, C. et al. Structural and Optical Properties of GaN Quantum Dots. MRS Online Proceedings Library 798, 34–44 (2003). https://doi.org/10.1557/PROC-798-Y4.7
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-798-Y4.7