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Strain mapping on gold thin film buckling and silicon blistering

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Abstract

Stress/Strain fields associated with thin film buckling induced by compressive stresses or blistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.

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Authors and Affiliations

  1. Laboratoire de Métallurgie Physique, UMR 6630 CNRS, Université de Poitiers, SP2MI, Téléport2, Bd M. et P. Curie, BP 30179, F-86962, Futuroscope Chasseneuil cedex, USA

    P. Goudeau, G. Parry, J. Colin & C. Coupeau

  2. Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 2-400, 94270, Berkeley, CA, USA

    N. Tamura & H. Padmore

  3. Laboratoire de Science et Génie des Surface, Ecole des Mines de Nancy, UMR CNRS 7570, F-54042, Parc Saurupt, Nancy, USA

    F. Cleymand

Authors
  1. P. Goudeau
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  2. N. Tamura
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  3. G. Parry
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  4. J. Colin
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  5. C. Coupeau
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  6. F. Cleymand
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  7. H. Padmore
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Goudeau, P., Tamura, N., Parry, G. et al. Strain mapping on gold thin film buckling and silicon blistering. MRS Online Proceedings Library 875, 104 (2005). https://doi.org/10.1557/PROC-875-O10.4

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  • DOI: https://doi.org/10.1557/PROC-875-O10.4

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