Abstract
Pores in single crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nano” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with e.g. optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, e.g. high explosives or electrodes for micro fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching), properties of porous semiconductors and emerging applications.
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References
L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
V. Lehmann and U. Gösele, Appl. Phys. Lett. 58, 856 (1991).
H. Föll, M. Christophersen, J. Carstensen, and G. Hasse, Mat. Sci. Eng. R 39(4), 93 (2002).
A. Uhlir, Bell System Tech. J. 35, 333 (1956).
H.C. Choi and J.M. Buriak, Chem. Commun. 17, 1669 (2000).
S. Langa, M. Christophersen, J. Carstensen, I.M. Tiginyanu, and H. Föll, Phys. Stat. Sol. a 195, R4 (2003).
H. Föll, S. Langa, J. Carstensen, M. Christophersen, and I.M. Tiginyanu, Adv. Mat. 15, 183 (2003).
M. Mynbaeva, A. Titkov, A. Kryzhanovski, I. Kotousova, A.S. Zubrilov, V.V. Ratnikov, V.Yu. Davydov, N.I. Kuznetsov, K. Mynbaev, D.V. Tsvetkov, S. Stepanov, A. Cherenkov, and V. Dmitriev, MRS Internet J. Nitride Semicond. Res. 4, 14 (1999).
S. Zangooie, J.A. Woollam, and H. Arwin, J. Mater. Res. 15, 1860 (2000).
E. Monaico, V.V. Ursaki, A. Urbieta, P. Fernández, J. Piqueras, R.W. Boyd, and I.M. Tiginyanu, Semicond. Sci. Technol. 19, L121 (2004).
L. Canham, A. Nassiopoulou, and V. Parkhutik (Eds.), phys. stat. sol (a) 197 (2003).
V. Lehmann and H. Föll, J. Electrochem. Soc. 137, 653 (1990).
Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. Choyke, Phys. Stat. Sol. (a) accepted (2005).
C. Fang, S. Langa, L. Jiang, J. Carstensen, E. Foca, and H. Föll, in Electrochemical pore etching in Germanium, ed. Mat. Res. Soc. Symp. Spring meeting 2005 - Abstracts, 3.8 (2005).
V. Lehmann and S. Rönnebeck, J. Electrochem. Soc. 146, 2968 (1999).
J. Carstensen, R. Prange, and H. Föll, J. Electrochem. Soc. 146, 1134 (1999).
ET&TE Etch and Technology GmbH, http://www.et-te.com.
J.E.A.M. van den Meerakker, R.J.G. Elfrink, F. Roozeboom, and J.F.C.M. Verhoeven, J. Electrochem. Soc. 14(7), 2757 (2000).
V. Lehmann, private communication (2005).
S. Frey, M. Kemell, J. Carstensen, S. Langa, and H. Föll, Phys. Stat. Sol. (a) accepted (2005).
S. Langa, I.M. Tiginyanu, J. Carstensen, M. Christophersen, and H. Föll, Appl. Phys. Lett. 82(2), 278 (2003).
V. Lehmann, S. Stengl, and A. Luigart, Mat. Sci. Eng. B 69-70, 11 (2000).
X.G. Zhang, Electrochemistry of silicon and its oxide, Kluwer Academic - Plenum Publishers, New York (2001).
V. Lehmann, Electrochemistry of silicon, Wiley-VCH, Weinheim (2002).
Unpublished results.
I.M. Tiginyanu, I.V. Kravetsky, S. Langa, G. Marowsky, H.L. Hartnagel, and H. Föll, phys. stat. sol. (a) 197(1/2) (2003).
I.M. Tiginyanu, S. Langa, L. Sirbu, E. Monaico, M.A. Stevens-Kalceff, and H. Föll, Eur. Phys. J. Appl. Phys. 27, 81 (2004).
D. Kovalev, G. Polisski, J. Diener, H. Heckler, N. Künzner, V.Yu. Timoshenko, and F. Koch, Appl. Phys. Lett. 78, 916 (2001).
V. Kochergin, M. Christophersen, and H. Föll, Appl. Phys. Lett. 86(1), 042108 (2004).
V. Kochergin, Omnidirectional Optical Filters, Kluwer Academic Publisher, Boston (2003).
D. Kovalev, V.Yu. Timoshenko, N. Künzner, E. Gross, and F. Koch, Phys. Rev. Lett. 87, 068301 (2001).
G. Kaltsas and A.G. Nassiopoulou, Sens. Act. A 76, 133 (1999).
C.J. Oton, L. Pancheri, Z. Gaburro, L. Pavesi, C. Baratto, G. Faglia, and G. Sberveglieri, Phys. Stat. Sol. (a) 197, 523 (2003).
Eds. K. Busch, S. Lölkes, R.B. Wehrspohn, and H. Föll, in Photonic Crystals: Advances in Design, Fabrication, and Characterization, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim (2004).
C. Mazzoleni and L. Pavesi, Appl. Phys. Lett. 67, 1983 (1995).
T.V. Dolgova, A.I. Maidykovski, M.G. Martemyanov, A.A. Fedyanin, O.A. Aktsipetrov, G. Marowsky, V.A. Yakovlev, G. Mattei, N. Ohta, and S. Nakabayashi, J. Opt. Soc. Am. B 19, 2129 (2002).
S. Langa, S. Frey, J. Carstensen, H. Föll, I.M. Tiginyanu, M. Hermann, and G. Böttger, Electrochem. Sol. State Lett. 8, C30 (2005).
V. Kochergin, M. Christophersen, and H. Föll, Appl. Phys. B 80(1), 81 (2004).
L. Ohlsen, Phys. Stat. Sol. (a) accepted (2005).
H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida, Nature 400, 853 (1999).
T. Yonehara, “BESOI with porous silicon: ELTRAN”, in Properties of porous silicon, ed. L.T. Canham, IEE-Books, London (1997).
C.K. Inoki, T.S. Kuan, C.D. Lee, A. Sagar, R.M. Feenstra, D.D. Koleske, D.J. Diaz, P.W. Bohn, and I. Adesida, J. Electron. Mater. 32, 855 (2003).
M. Steinhart, Z. Jia, A.K. Schaper, R.B. Wehrspohn, U. Gösele, and J.H. Wendorff, Adv. Mat. 15, 706 (2003).
R.B. Wehrspohn, S.L. Schweizer, J. Schilling, T. Geppert, C. Jamois, and R. Glatthaar, “Application of Photonic Crystals for Gas Detection and Sensing”, in Photonic Crystals: Advances in Design, Fabrication, and Characterization, eds. K. Busch, S. Lölkes, R. Wehrspohn, and H. Föll, Wiley-VCH, Weinheim (2004).
F. Cunin, T.A. Schmedake, J.R. Link, Y.Y. Li, J. Koh, S.N. Bhatia, and M.J. Sailor, Nat.Mat. 1, 39 (2002).
S.C. Bayliss, P.J. Harris, L.D. Buckberry, and C. Rousseau, J. Mat. Sci. Lett. 16, 737 (1997).
T. Laurell, J. Drott, L. Rosengren, and K. Lindström, Sensors and Actuators B 31, 161 (1996).
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Föll, H., Carstensen, J. & Frey, S. Porous and Nanoporous Semiconductors and Emerging Applications. MRS Online Proceedings Library 876, 121 (2005). https://doi.org/10.1557/PROC-876-R12.1
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DOI: https://doi.org/10.1557/PROC-876-R12.1