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Porous and Nanoporous Semiconductors and Emerging Applications

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Abstract

Pores in single crystalline semiconductors can be produced in a wide range of geometries and morphologies, including the “nano” regime. Porous semiconductors may have properties completely different from the bulk, and metamaterials with e.g. optical properties not encountered in natural materials are emerging. Possible applications of porous semiconductors include various novel sensors, but also more “exotic” uses as, e.g. high explosives or electrodes for micro fuel cells. The paper briefly reviews pore formation (including more applied aspects of large area etching), properties of porous semiconductors and emerging applications.

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References

  1. L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990).

    Article  CAS  Google Scholar 

  2. V. Lehmann and U. Gösele, Appl. Phys. Lett. 58, 856 (1991).

    Article  CAS  Google Scholar 

  3. H. Föll, M. Christophersen, J. Carstensen, and G. Hasse, Mat. Sci. Eng. R 39(4), 93 (2002).

    Article  Google Scholar 

  4. A. Uhlir, Bell System Tech. J. 35, 333 (1956).

    Article  CAS  Google Scholar 

  5. H.C. Choi and J.M. Buriak, Chem. Commun. 17, 1669 (2000).

    Article  Google Scholar 

  6. S. Langa, M. Christophersen, J. Carstensen, I.M. Tiginyanu, and H. Föll, Phys. Stat. Sol. a 195, R4 (2003).

    Article  CAS  Google Scholar 

  7. H. Föll, S. Langa, J. Carstensen, M. Christophersen, and I.M. Tiginyanu, Adv. Mat. 15, 183 (2003).

    Article  Google Scholar 

  8. M. Mynbaeva, A. Titkov, A. Kryzhanovski, I. Kotousova, A.S. Zubrilov, V.V. Ratnikov, V.Yu. Davydov, N.I. Kuznetsov, K. Mynbaev, D.V. Tsvetkov, S. Stepanov, A. Cherenkov, and V. Dmitriev, MRS Internet J. Nitride Semicond. Res. 4, 14 (1999).

    Article  Google Scholar 

  9. S. Zangooie, J.A. Woollam, and H. Arwin, J. Mater. Res. 15, 1860 (2000).

    Article  CAS  Google Scholar 

  10. E. Monaico, V.V. Ursaki, A. Urbieta, P. Fernández, J. Piqueras, R.W. Boyd, and I.M. Tiginyanu, Semicond. Sci. Technol. 19, L121 (2004).

    Article  CAS  Google Scholar 

  11. L. Canham, A. Nassiopoulou, and V. Parkhutik (Eds.), phys. stat. sol (a) 197 (2003).

    Article  CAS  Google Scholar 

  12. V. Lehmann and H. Föll, J. Electrochem. Soc. 137, 653 (1990).

    Article  CAS  Google Scholar 

  13. Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. Choyke, Phys. Stat. Sol. (a) accepted (2005).

  14. C. Fang, S. Langa, L. Jiang, J. Carstensen, E. Foca, and H. Föll, in Electrochemical pore etching in Germanium, ed. Mat. Res. Soc. Symp. Spring meeting 2005 - Abstracts, 3.8 (2005).

    Google Scholar 

  15. V. Lehmann and S. Rönnebeck, J. Electrochem. Soc. 146, 2968 (1999).

    Article  CAS  Google Scholar 

  16. J. Carstensen, R. Prange, and H. Föll, J. Electrochem. Soc. 146, 1134 (1999).

    Article  CAS  Google Scholar 

  17. ET&TE Etch and Technology GmbH, http://www.et-te.com.

  18. J.E.A.M. van den Meerakker, R.J.G. Elfrink, F. Roozeboom, and J.F.C.M. Verhoeven, J. Electrochem. Soc. 14(7), 2757 (2000).

    Article  Google Scholar 

  19. V. Lehmann, private communication (2005).

  20. S. Frey, M. Kemell, J. Carstensen, S. Langa, and H. Föll, Phys. Stat. Sol. (a) accepted (2005).

  21. S. Langa, I.M. Tiginyanu, J. Carstensen, M. Christophersen, and H. Föll, Appl. Phys. Lett. 82(2), 278 (2003).

    Article  CAS  Google Scholar 

  22. V. Lehmann, S. Stengl, and A. Luigart, Mat. Sci. Eng. B 69-70, 11 (2000).

    Google Scholar 

  23. X.G. Zhang, Electrochemistry of silicon and its oxide, Kluwer Academic - Plenum Publishers, New York (2001).

    Google Scholar 

  24. V. Lehmann, Electrochemistry of silicon, Wiley-VCH, Weinheim (2002).

    Book  Google Scholar 

  25. Unpublished results.

  26. I.M. Tiginyanu, I.V. Kravetsky, S. Langa, G. Marowsky, H.L. Hartnagel, and H. Föll, phys. stat. sol. (a) 197(1/2) (2003).

    Google Scholar 

  27. I.M. Tiginyanu, S. Langa, L. Sirbu, E. Monaico, M.A. Stevens-Kalceff, and H. Föll, Eur. Phys. J. Appl. Phys. 27, 81 (2004).

    Article  CAS  Google Scholar 

  28. D. Kovalev, G. Polisski, J. Diener, H. Heckler, N. Künzner, V.Yu. Timoshenko, and F. Koch, Appl. Phys. Lett. 78, 916 (2001).

    Article  CAS  Google Scholar 

  29. V. Kochergin, M. Christophersen, and H. Föll, Appl. Phys. Lett. 86(1), 042108 (2004).

    Google Scholar 

  30. V. Kochergin, Omnidirectional Optical Filters, Kluwer Academic Publisher, Boston (2003).

    Book  Google Scholar 

  31. D. Kovalev, V.Yu. Timoshenko, N. Künzner, E. Gross, and F. Koch, Phys. Rev. Lett. 87, 068301 (2001).

    Article  CAS  Google Scholar 

  32. G. Kaltsas and A.G. Nassiopoulou, Sens. Act. A 76, 133 (1999).

    Article  CAS  Google Scholar 

  33. C.J. Oton, L. Pancheri, Z. Gaburro, L. Pavesi, C. Baratto, G. Faglia, and G. Sberveglieri, Phys. Stat. Sol. (a) 197, 523 (2003).

    Article  CAS  Google Scholar 

  34. Eds. K. Busch, S. Lölkes, R.B. Wehrspohn, and H. Föll, in Photonic Crystals: Advances in Design, Fabrication, and Characterization, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim (2004).

    Book  Google Scholar 

  35. C. Mazzoleni and L. Pavesi, Appl. Phys. Lett. 67, 1983 (1995).

    Article  Google Scholar 

  36. T.V. Dolgova, A.I. Maidykovski, M.G. Martemyanov, A.A. Fedyanin, O.A. Aktsipetrov, G. Marowsky, V.A. Yakovlev, G. Mattei, N. Ohta, and S. Nakabayashi, J. Opt. Soc. Am. B 19, 2129 (2002).

    Article  CAS  Google Scholar 

  37. S. Langa, S. Frey, J. Carstensen, H. Föll, I.M. Tiginyanu, M. Hermann, and G. Böttger, Electrochem. Sol. State Lett. 8, C30 (2005).

    Article  CAS  Google Scholar 

  38. V. Kochergin, M. Christophersen, and H. Föll, Appl. Phys. B 80(1), 81 (2004).

    Article  CAS  Google Scholar 

  39. L. Ohlsen, Phys. Stat. Sol. (a) accepted (2005).

  40. H. Shinoda, T. Nakajima, K. Ueno, and N. Koshida, Nature 400, 853 (1999).

    Article  CAS  Google Scholar 

  41. T. Yonehara, “BESOI with porous silicon: ELTRAN”, in Properties of porous silicon, ed. L.T. Canham, IEE-Books, London (1997).

    Google Scholar 

  42. C.K. Inoki, T.S. Kuan, C.D. Lee, A. Sagar, R.M. Feenstra, D.D. Koleske, D.J. Diaz, P.W. Bohn, and I. Adesida, J. Electron. Mater. 32, 855 (2003).

    Article  CAS  Google Scholar 

  43. M. Steinhart, Z. Jia, A.K. Schaper, R.B. Wehrspohn, U. Gösele, and J.H. Wendorff, Adv. Mat. 15, 706 (2003).

    Article  CAS  Google Scholar 

  44. R.B. Wehrspohn, S.L. Schweizer, J. Schilling, T. Geppert, C. Jamois, and R. Glatthaar, “Application of Photonic Crystals for Gas Detection and Sensing”, in Photonic Crystals: Advances in Design, Fabrication, and Characterization, eds. K. Busch, S. Lölkes, R. Wehrspohn, and H. Föll, Wiley-VCH, Weinheim (2004).

    Book  Google Scholar 

  45. F. Cunin, T.A. Schmedake, J.R. Link, Y.Y. Li, J. Koh, S.N. Bhatia, and M.J. Sailor, Nat.Mat. 1, 39 (2002).

    Article  CAS  Google Scholar 

  46. S.C. Bayliss, P.J. Harris, L.D. Buckberry, and C. Rousseau, J. Mat. Sci. Lett. 16, 737 (1997).

    Article  CAS  Google Scholar 

  47. T. Laurell, J. Drott, L. Rosengren, and K. Lindström, Sensors and Actuators B 31, 161 (1996).

    Article  CAS  Google Scholar 

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Föll, H., Carstensen, J. & Frey, S. Porous and Nanoporous Semiconductors and Emerging Applications. MRS Online Proceedings Library 876, 121 (2005). https://doi.org/10.1557/PROC-876-R12.1

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  • DOI: https://doi.org/10.1557/PROC-876-R12.1

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