References
J-P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI (Kluwer Academic Publishers, Boston, Dordrecht, London, 1991).
M. Watanabe and A. Tooi, Jpn. J. Appl. Phys. 5 (1966) p. 737.
K. Izumi, M. Dokin, and H. Ariyoshi, Electron. Lett. 14 (18) (1978) p. 593.
P.L.F. Hemment, E. Maydell-Ondrusz, K.G. Stephens, J. Butcher, D. Ioannou, and J. Alderman, Nucl. Instrum. Methods 209/210 (1983) p. 157.
M. Guerra, V. Benveniste, G. Ryding, D.H. Douglas-Hamilton, M. Reed, G. Gagne, A. Armstrong, and M. Mack, Nucl. Instrum. Methods Phys. Res. B 6 (1985) p. 63.
G.K. Celler, P.L.F. Hemment, K.W. West, and J.M. Gibson, Appl. Phys. Lett. 48 (1986) p. 532.
S. Visitserngtrakul, S.J. Krause, P. Roitman, D.S. Simons, and B.F. Cordts, ibid. 59 (1991) p. 3003.
L.P. Allen, M.J. Anc, M. Duffy, J.H. Parechanian, and J.H. Yap, in Proc. Electrochem. Soc, vol. 96-3 (1996) p. 18.
P. Roitman, M. Edelstein, S. Visitserngtrakul, and S.J. Krause, in Proc. IEEE SOS/SOI Technology Conf. (Key West, FL, 1990) p. 154.
M.J. Anc and W.A. Krull, in Proc. IEEE Int. SOI Conf. (Nantucket, MA, 1994) p. 79.
D. Venables and K.S. Jones, Nucl. Instrum. Methods Phys. Res. B 74 (1993) p. 65.
J.D. Lee, J.C. Park, D. Venables, S.J. Krause, and P. Roitman in Materials Synthesis and Processing Using Ion Beams, edited by R.J. Culbertson, O.W. Holland, K.S. Jones, and K. Maex (Mater. Res. Soc. Symp. Proc. 316, Pittsburgh, 1994) p. 753.
Ibid., Appl. Phys. Lett. 6 (1993) p. 3330.
G. Ryding, T.H. Smick, M. Farley, B.F. Cordts, R.P. Dolan, L.P. Allen, B. Mathews, W. Wray, B. Amundsen, and M.J. Anc, in Proc. 11th Int. Conf. on Ion Implantation Technology (Austin, TX, 1996) p. 35.
K. Tokiguchi, Y. Yamashita, T. Seki, and I. Hashimoto, in Proc. Electrochem. Soc, vol. 96-3 (1996) p. 28.
S. Nakashima and K. Izumi, J. Mater. Res. 8 (1993) p. 523.
S. Bagchi, J.D. Lee, S.J. Krause, and P. Roitman, J. Electron. Mater. 22 (1996) p. 7.
S. Bagchi, S.J. Krause, and P. Roitman, Appl. Phys. Lett. 71 (1997) p. 2136.
S. Nakashima; T. Katayama, Y. Miyamura, A. Matsuzaki, M. Kataoka, D. Ebi, M. Irriai, K. Izumi, and N. Ohwada, J. Electrochem. Soc. 143 (1) (1996) p. 244.
B.J. Mrstik, P.J. McMarr, H.L. Hughes, M.J. Anc, and W.A. Krull, Appl. Phys. Lett. 67 (22) (1995) p. 3283.
M.L. Alles, in Proc. IEEE Int. SOI Conf. (Yosemite, CA, 1997) p. 128.
M.J. Anc, M. Farley, J. Jiao, S. Seraphin, J. Kirchoff, P.J. McMarr, and H.L. Hughes, in Proc. IEEE Int. SOI Conf. (1998).
A. Ogura, J. Electrochem. Soc. 145 (5) (1998) p. 1735.
N. Meyappan, T. Nakato, and H. Takeuchi, in Proc. IEEE Int. SOI Conf. (Tucson, AZ, 1995) p. 164.
O.W. Holland, D. Fathy, and D.K. Sadana, Appl. Phys. Lett. 69 (1996) p. 674.
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Krause, S., Ane, M. & Roitman, P. Evolution and Future Trends of SIMOX Material. MRS Bulletin 23, 25–29 (1998). https://doi.org/10.1557/S0883769400029791
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DOI: https://doi.org/10.1557/S0883769400029791