Abstract
Hydrogen blister rates in Si (100), Si (111) and Ge (100) substrates are compared as a function of annealing temperature and time, for a range of implant energies and fluences. For each material, the rate of blister formation was found to exhibit Arrhenius behavior and to be characterised by a single activation energy over the temperature range examined. The extracted activation energies were 2.28±0.03 eV, 2.17±0.06 eV and 1.4±0.03 eV for (100) Si; (111) Si and (100) Ge, respectively. These results are compared with reported measurements and discussed in relation to proposed models of hydrogen blistering.
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Acknowledgments
One of the authors (DJP) would like to thank David Llewellyn at the Centre for Advanced Microscopy at The Australian National University for assistance with TEM operation.
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Pyke, D.J., Elliman, R.G. & McCallum, J.C. Activation Energy and Blistering Rate in Hydrogen-implanted Semiconductors. MRS Online Proceedings Library 1424, 79–84 (2012). https://doi.org/10.1557/opl.2012.677
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DOI: https://doi.org/10.1557/opl.2012.677