Abstract
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are studied in thick amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates for H-free Ge were measured with a time-resolved reflectivity (TRR) system in the temperature range 300 – 540 °C and found to have an activation energy of (2.15 ± 0.04) eV. Dopant enhanced SPE was measured in a-Ge layers containing a uniform concentration profile of implanted As spanning the concentration regime 1 – 10 × 1019 cm3. The generalized Fermi level shifting model shows excellent fits to the data.
Similar content being viewed by others
References
International Technology Roadmap for Semiconductors (2003 Edition).
G.-Q. Lu, E. Nygren, and M. J. Aziz, J. Appl. Phys. 70, 5323 (1991).
B. Depuydt, A. Theuwis, and I. Romandic, Mater. Sci. Semicond. Process. 9, 437 (2006).
L. Csepregi, R. P. K ullen, J. W. Mayer, and T. W. Sigmon, Solid State Commun. 21, 1019 (1977)
E. Donavan, F. Spaepen, D. Turnbull, J. Poate and D. Jacobsen, J. Appl. Phys. 57, 1795 (1985).
G. Q. Lu, E. Nygren, M. J. Aziz, D. Turnbull, and C. W. White, Appl. Phys. Lett. 56, 137 (1990).
P. Kringhøj and R. G. Elliman, Phys. Rev. Lett. 73, 858 (1994).
T. E. Haynes, M. J. Antonell, C. A. Lee, and K. S. Jones, Phys. Rev. B. 51, 7762 (1995).
G. Olson and J. Roth, in Handbook of Crystal Growth, edited by D. Hurle (Elsevier Science B. 1994), vol. 3, chap. 7, pp. 255 – 312.
J. A. Roth, G. L. Olson, D. C. Jacobson, and J. M. Poate, Appl. Phys. Lett. 57, 1340 (1990).
J. A. Roth, G. L. Olson, D. C. Jacobson, and J. M. Poate, Mat. Res. Soc. Symp. Proc. 205, 45 (1992).
J. C. McCallum, Appl. Phys. Lett. 69, 925 (1996).
B. C. Johnson and J. C. McCallum, Phys. Rev. B. 76, 045216 (2007).
J. Williams and R. Elliman, Phys. Rev. Lett. 51, 1069 (1983).
I. Suni, G. Göltz, M. Nicolet, and S. Lau, Thin Solid Films 93, 171 (1982).
A. Armigliato, R. Nipoti, G. Bentini, M. Mazzone, M. Bianconi, A. N. Larsen, and A. Gasparotto, Mat. Sci. Eng. B2, 63 (1989).
B. C. Johnson, P. Gortmaker, and J. C. McCallum, submitted to PHYSICAL REVIEW B. (2008)
Profile, Ion Beam Profile Code version 3.20, Implant Sciences Corp. 107 Audubon Rd., No. 5, Wakefield, MA 01880.
J. C. Bourgoin and P. Germain, Phys. Lett. 54A, 444 (1975). 30 Y. Jeon, M. Becker, and R. Walser, Mat. Res. Soc. 157, 745 (1990).
H. Haesslein, R. Sielemann, and C. Zistl, Phys. Rev. Lett. 80, 2626 (1998).
J. Coutinho, V. J. B. Torres, A. Carvalho, R. Jones, S. Olberg, and P. R. Briddon, Mater. Sci. Semicond. Process. 9, 477 (2006).
F. Spaepen and D. Turnbull, AIP Conf. Proc. 50, 73 (1979).
T. Saito and I. Ohdomari, Phil. Mag. B 49, 471 (1984).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Johnson, B.C., Gortmaker, P. & McCallum, J.C. Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Amorphous Germanium. MRS Online Proceedings Library 1070, 10700506 (2007). https://doi.org/10.1557/PROC-1070-E05-06
Received:
Accepted:
Published:
DOI: https://doi.org/10.1557/PROC-1070-E05-06