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Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Amorphous Germanium

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Abstract

The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are studied in thick amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates for H-free Ge were measured with a time-resolved reflectivity (TRR) system in the temperature range 300 – 540 °C and found to have an activation energy of (2.15 ± 0.04) eV. Dopant enhanced SPE was measured in a-Ge layers containing a uniform concentration profile of implanted As spanning the concentration regime 1 – 10 × 1019 cm3. The generalized Fermi level shifting model shows excellent fits to the data.

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Authors and Affiliations

  1. School of Physics, University of Melbourne, Swanston Street, Melbourne, Australia

    Brett C. Johnson & Jeffrey C. McCallum

  2. Department of Electronic Materials Engineering, Australian National University, Canberra, Australia

    Paul Gortmaker

Authors
  1. Brett C. Johnson
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  2. Paul Gortmaker
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  3. Jeffrey C. McCallum
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Johnson, B.C., Gortmaker, P. & McCallum, J.C. Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Amorphous Germanium. MRS Online Proceedings Library 1070, 10700506 (2007). https://doi.org/10.1557/PROC-1070-E05-06

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  • DOI: https://doi.org/10.1557/PROC-1070-E05-06

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