Abstract
Large diamond particles up to 30μm in diameter have been deposited on W wire tips using Microwave Plasma Chemical Vapour Deposition. Raman, SEM and TEM investigations were all carried out on a single particle. Large growth steps were observed on (100) facets but were absent on the (111) facets. Raman measurements indicated greater crystalline quality for (100) than (111) facets. TEM revealed the (111) facets to be covered with small islands of diamond about 10Å. high. The dominant defect was found to be stacking faulting on the {111} planes which gives rise to some hexagonal spacings in the electron diffraction pattern. The results suggest that growth in the <111> and <100> directions are driven by different mechanisms.
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Acknowledgement
The authors would like to acknowledge the support of CRA Advanced Technical Development. We would also like to thank Neil Avery from the CSIRO Division of Material Science & Technology and Terry Mernagh from the Bureau of Mineral Resources in Canberra.
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Stuart, SA., Prawer, S., Hoffman, A. et al. Investigation of Diamond Particles Grown by Microwave Plasma CVD on Tungsten Wire Tips.. MRS Online Proceedings Library 202, 217–222 (1990). https://doi.org/10.1557/PROC-202-217
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DOI: https://doi.org/10.1557/PROC-202-217