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Analysis of quantum effects in metal oxide semiconductor field effect transistor in fractal dimensions

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Abstract

The MOSFET is a semiconductor microelectronic single-chip used in different technical aspects in computer engineering and nanotechnology. However, there are many self-assembly micro- and nano-electronic processes generating fractal patterns where millions of metallic nanoparticles are self-assembled into fractal electronic circuits. This proves the importance of fractals in nano-devices such as MOSFET. In this letter, we study quantum effects on MOSFET in fractal dimensions based on the concept of "product-like fractal measure" introduced recently in literature by Li and Ostoja-Starzewski. This study shows that fractal quantum mechanical effects occurring in micro- and nanoelectronics deserve to be considered seriously.

Graphical abstract

Variations of the electric potential for different values of fractal dimensions.

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  1. M. Ven, Science and Technology Communication, https://www.zerotoasiccourse.com/matt_venn/.

  2. https://wolles-elektronikkiste.de/en/about-me-and-the-blog.

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Acknowledgments

The authors would like to thank the anonymous referees for useful comments and valuable suggestions.

Funding

The authors would like to thank Chiang Mai University for funding this research.

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Authors and Affiliations

  1. Center of Excellence in Quantum Technology, Faculty of Engineering, Chiang Mai University, Chiang Mai, 50200, Thailand

    Rami Ahmad El-Nabulsi & Waranont Anukool

  2. Research Center for Quantum Technology, Faculty of Science, Chiang Mai University, Chiang Mai, 50200, Thailand

    Rami Ahmad El-Nabulsi & Waranont Anukool

  3. Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200, Thailand

    Waranont Anukool

Authors
  1. Rami Ahmad El-Nabulsi
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Correspondence to Rami Ahmad El-Nabulsi.

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El-Nabulsi, R.A., Anukool, W. Analysis of quantum effects in metal oxide semiconductor field effect transistor in fractal dimensions. MRS Communications 13, 233–239 (2023). https://doi.org/10.1557/s43579-023-00334-5

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