Design of Multi-Segment Hybrid Type Content Addressable Memory in High Performance FinFET Technology

V  Mohammed Zackriya; Anurag Verma and Harish M  Kittur

doi:10.17485/ijst/2015/v8i24/79962

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Design of Multi-Segment Hybrid Type Content Addressable Memory in High Performance FinFET Technology

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Indian Journal of Science and Technology

DOI: 10.17485/ijst/2015/v8i24/79962

Year: 2015, Volume: 8, Issue: 24, Pages: 1-6

Original Article

Design of Multi-Segment Hybrid Type Content Addressable Memory in High Performance FinFET Technology

V. Mohammed Zackriya^*, Anurag Verma and Harish M. Kittur

School of Electronics Engineering, VIT University, Vellore - 632014, Tamil Nadu, India;
[email protected], [email protected], [email protected]

This work is licensed under a Creative Commons Attribution 4.0 International License.

Abstract

Power dissipation due to memories has become a major concern of modern digital design. Scaling of CMOS technology has lead to short channel effects. Here CAM cells are designed using FinFET which have better gate control over drain to source current. The CAM cells designed with 30nm LG are used in multi-segment hybrid CAM architecture. The results are compared with the original hybrid CAM. It is observed that the energy metric of proposed architecture is 7% less compared to hybrid CAM.
Keywords: Content-Addressable Memory (CAM), FinFET, Hybrid-Type CAM