Current Photovoltaic Research

Korea Photovoltaic Society (한국태양광발전학회)
권호 표지
DOI QR코드

DOI QR Code

The Properties of Passivation Films on Al2O3/SiNX Stack Layer in Crystalline Silicon Solar Cells

결정질 실리콘 태양전지의 Al2O3/SiNX 패시베이션 특성 분석

  • Hyun, Ji Yeon (Department of Materials Science and Engineering, Korea University) ;
  • Song, In Seol (KU KIST Green School, Graduated school of Energy and Environment, Korea University) ;
  • Kim, Jae Eun (Department of Materials Science and Engineering, Korea University) ;
  • Bae, Soohyun (Department of Materials Science and Engineering, Korea University) ;
  • Kang, Yoonmook (KU KIST Green School, Graduated school of Energy and Environment, Korea University) ;
  • Lee, Hae-Seok (KU KIST Green School, Graduated school of Energy and Environment, Korea University) ;
  • Kim, Donghwan (Department of Materials Science and Engineering, Korea University)
  • 현지연 (신소재공학과, 고려대학교) ;
  • 송인설 (그린스쿨대학원, 고려대학교) ;
  • 김재은 (신소재공학과, 고려대학교) ;
  • 배수현 (신소재공학과, 고려대학교) ;
  • 강윤묵 (그린스쿨대학원, 고려대학교) ;
  • 이해석 (그린스쿨대학원, 고려대학교) ;
  • 김동환 (신소재공학과, 고려대학교)
  • Received : 2017.06.06
  • Accepted : 2017.06.10
  • Published : 2017.06.30
Download PDF
⟨ Previous Next ⟩

Abstract

Aluminum oxide ($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. The quality of passivation layer is important for high-efficiency silicon solar cell. double-layer structures have many advantages over single-layer materials. $Al_2O_3/SiN_X$ passivation stacks have been widely adopted for high- efficiency silicon solar cells. The first layer, $Al_2O_3$, passivates the surface, while $SiN_X$ acts as a hydrogen source that saturates silicon dangling bonds during annealing treatment. We explored the properties on passivation film of $Al_2O_3/SiN_X$ stack layer with changing the conditions. For the post annealing temperature, it was found that $500^{\circ}C$ is the most suitable temperature to improvement surface passivation.

Keywords

References

  1. Chen, Y., "Independent Al2O3/SiNx:H and SiO2/SiN x:H Passivation of p+ and n+ Silicon Surfaces for High-Performance Interdigitated Back Contact Solar Cells." IEEE Journal of Photovoltaics, Vol. 7, No. 1, pp. 51-57, 2017. https://doi.org/10.1109/JPHOTOV.2016.2617042
  2. Dingemans, G., " Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells." J. of VSTA, Vol. 30, No. 4, pp. 040802, 2012.
  3. Von Gastow, G., "Analysis of the atomic layer deposited Al2O3 field-effect passivation in black silicon." Solar Energy Materials and Solar Cells, Vol. 142, pp. 29-33, 2015. https://doi.org/10.1016/j.solmat.2015.05.027
  4. Feldmann, F., "Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics." Solar Energy Materials and Solar Cells, Vol. 120, pp. 270-274, 2014. https://doi.org/10.1016/j.solmat.2013.09.017
  5. Cornagliotti, E., "Large-area n-type PERT solar cells featuring rear p+ emitter passivated by ALD Al2O3" IEEE Journal of Photovoltaics, Vol. 5, No. 5, pp. 1366-1372, 2015. https://doi.org/10.1109/JPHOTOV.2015.2458041
  6. Davidsen, R. S., "Black silicon laser-doped selective emitter solar cell with 18.1% efficiency." Solar Energy Materials and Solar Cells, Vol. 144, pp. 740-747, 2016. https://doi.org/10.1016/j.solmat.2015.10.018
  7. Battaglia, C., "High-efficiency crystalline silicon solar cells: status and perspectives." Energy & Environmental Science, Vol. 9, No. 5, pp. 1552-1576, 2016. https://doi.org/10.1039/C5EE03380B
  8. Dingemans, G., "Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystaliine silicon." J.of AP Vol. 106, No. 11, pp 114907, 2009. https://doi.org/10.1063/1.3264572
  9. Dingemans, G., "Influence of the deposition temperature on the c-Si surface passivation by Al2O3 films synthesized by ALD and PECVD." Electrochemical and Sold-state letters Vol. 13, No. 3, pp. H76-H79, 2010. https://doi.org/10.1149/1.3276040
  10. Richter, A., " Aluminum oxide for the surface passivation of high efficiency silicon solar cells: Technology and advanced characterization", Fraunhofer Verl, 2015.
  11. Lelièvre, J. F., "Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon." Solar Energy Materials and Solar Cells, Vol. 93, No. 8, pp. 1281-1289, 2009. https://doi.org/10.1016/j.solmat.2009.01.023