Low temperature specific heats of the GaP, InP, GaAs and InAs compounds were measured over the temperature range 4.5 to 298.15 K using an adiabatic calorimeter. The Debye temperatures were derived from the obtained specific heat data. The curves of Debye temperature as a function of temperature for the GaP, InP, GaAs and InAs compounds exhibit a minimum in the temperature range of 15∼30 K and a maximum at somewhat higher temparatures (approximately 130∼180 K). The standard entropies of the GaP, InP, GaAs and InAs compounds determined from the specific heat data were 50.5, 62.1, 64.1 and 75.5 J/(mol·K), respectively. A relation was found between the standard entropy and the cohesive energy. The standard entropies of the III-V compounds decreased linearly with increasing cohesive energy per bond.