Recrystallization of the Structure of Silicon Carbide under Ion Irradiation

Abstract

Silicon carbide was irradiated with aluminum ions at an energy of 190 keV with fluences of $2\times 10^{13}{-}5\times 10^{14}$ ion/cm${}^{2}$. The temperature of the target during irradiation was 300–500${}^{\circ}$C or it was kept at room temperature. It is shown that the presence of nitrogen in the structure of silicon carbide erodes the edge of the interband absorption. After irradiation at room temperature, the structure is disordered to form Si–Si and C–C compounds, as well as 3C–SiC. According to the absorption spectra, when the target temperature is increased during irradiation to 500${}^{\circ}$C, the structure of silicon carbide recrystallizes up to the initial state.