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A microwave detector based on an MCT photodiode for subthermonuclear plasma research

  • Physical and Technical Aspects of Micro- and Optoelectronics
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Optoelectronics, Instrumentation and Data Processing Aims and scope

Abstract

A microwave detector including a single-element infrared (IR) photodiode mounted in a cooled Dewar and a preamplifier is developed. An IR photodiode of the n +-p type is created on the basis of mercury-cadmium telluride (HgCdTe or MCT) heteroepitaxial structures grown by means of molecular beam epitaxy. A special profile of MCT structures throughout the MCT layer thickness ensures a low series resistance of less than 10 Ω and a high quantum efficiency at a level of 0.65 without any antireflection coating. For the spectral range of 8 to 12 μm, IR photodiodes are characterized by a low threshold power of 3.8·10−13 W·Hz−1/2 and 10−19 W·Hz−1 in the direct and heterodyne regimes, respectively. The cooled Dewar maintains the operating temperature of the IR photodiode in the interval of 77 to 80 K for 8. The preamplifier operates in a frequency range up to 1 GHz. With the use of this microwave detector, a method is developed for detection of intensity of a CO2 laser beam on plasma fluctuations caused by heating by a relativistic electron beam (REB). At high REB intensities, dips of the turbulence signal with a duration of several nanoseconds are observed, which is interpreted as a collapse of Langmuir waves.

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Correspondence to V. V. Vasilyev.

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Original Russian Text © V.V. Vasilyev, S.A. Dvoretsky, V.S. Varavin, N.N. Mikhailov, I.V. Marchishin, Yu.G. Sidorov, A.O. Suslyakov, V.N. Ovsyuk, V.S. Burmasov, S.S. Popov, E.P. Kruglyakov, A.L. Aseev, 2007, published in Avtometriya, 2007, Vol. 43, No. 4, pp. 5–16.

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Vasilyev, V.V., Dvoretsky, S.A., Varavin, V.S. et al. A microwave detector based on an MCT photodiode for subthermonuclear plasma research. Optoelectron.Instrument.Proc. 43, 299–307 (2007). https://doi.org/10.3103/S8756699007040012

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  • DOI: https://doi.org/10.3103/S8756699007040012

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