Abstract
In this study, indium-filled CoSb3 skutterudite is synthesized via encapsulated induction melting and subsequent annealing at 823 K for six days, and the crystal structure, lattice constant, filler position, phase homogeneity and stability were investigated. All of the In-filled CoSb3 samples were n-type conducting samples. The temperature dependence of the electrical resistivity showed InzCo4Sb12 is a highly degenerate semiconducting material. The thermal conductivity was reduced considerably by In filling. The highest thermoelectric figure of merit value was achieved when the In filling fraction is 0.25. It was found that the ZT of the In-filled CoSb3 (InzCo4Sb12) was higher than that of the In-substituted CoSb3 (Co3.75In0.25Sb12 and Co4Sb11.75In0.25). This is mainly due to the lower thermal conductivity and higher Seebeck coefficient.
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Mallik, R.C., Jung, JY., Ur, SC. et al. Thermoelectric properties of InzCo4Sb12 skutterudites. Met. Mater. Int. 14, 223–228 (2008). https://doi.org/10.3365/met.mat.2008.04.223
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DOI: https://doi.org/10.3365/met.mat.2008.04.223