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Electrical properties of Ag Schottky contacts to hydrothermally-grown polar and nonpolar bulk ZnO

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Abstract

The electrical properties of Ag Schottky contacts to hydrothermally-grown polar (Zn- and Opolar) and nonpolar (m-plane) bulk ZnO were investigated. Ohmic-like behavior for Zn-polar ZnO and rectifying behaviors for O-polar and m-plane ZnO were observed from current-voltage (I–V ) measurements. Schottky contacts to O-polar ZnO were found to have higher barrier heights and lower ideality factors than those to m-plane ZnO. Higher series resistances were found for both the Zn-polar and the m-plane ZnO compared to the O-polar ZnO probably due to the presence of the interfacial layer and interface states. The homogeneous barrier heights obtained from linear fitting to the effective barrier height vs. ideality factor plots were similar to those obtained from capacitance-voltage (C–V ) measurements. A higher degree of oxidation at the Ag-ZnO interface might occur for O-polar ZnO than for m-plane ZnO, increasing the barrier heights. The large dispersion in the capacitance for m-plane ZnO was related to the excess capacitance due to the interface states.

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Authors and Affiliations

  1. College of Humanities and Sciences, Hanbat National University, Daejeon, 305-719, Korea

    Hogyoung Kim

  2. Department of Physics, Ewha Womans University, Seoul, 120-750, Korea

    Haeri Kim

  3. Department of Physics, Department of Chemistry and Nano Science, Ewha Womans University, Seoul, 120-750, Korea

    Dong-Wook Kim

Authors
  1. Hogyoung Kim
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  2. Haeri Kim
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  3. Dong-Wook Kim
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Correspondence to Hogyoung Kim.

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Kim, H., Kim, H. & Kim, DW. Electrical properties of Ag Schottky contacts to hydrothermally-grown polar and nonpolar bulk ZnO. Journal of the Korean Physical Society 61, 1314–1318 (2012). https://doi.org/10.3938/jkps.61.1314

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