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One-dimensional InGaZnO field-effect transistor on a polyimide wire substrate for an electronic textile

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Abstract

Amorphous InGaZnO (IGZO) is a promising semiconducting material to replace amorphous and polycrystalline Si. IGZO-based field-effect transistors (FET) can be versatile platforms for various electronic or optoelectronic applications. Here, we report on a one-dimensional (1-D) IGZO FET fabricated on a flexible polyimide wire substrate for electronic textiles (e-textiles). This flexible 1-D IGZO FET shows a high mobility of 18.18 cm2/Vs with a relatively good on/off current ratio of 104 at operating voltages below 5 V. Furthermore, a resistive-load inverter is implemented by connecting the 1-D IGZO FET to an external load resistor. Such an inverter exhibits obvious voltage switching characteristics, verifying the potential it is being a basic building block for an e-textile circuit system.

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Authors and Affiliations

  1. Department of Chemical Engineering, Hanyang University, Seoul, 04763, Korea

    Tae-Hee Yoo & Byoung-In Sang

  2. Center of Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea

    Do Kyung Hwang

Authors
  1. Tae-Hee Yoo
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  2. Byoung-In Sang
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  3. Do Kyung Hwang
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Correspondence to Do Kyung Hwang.

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Yoo, TH., Sang, BI. & Hwang, D.K. One-dimensional InGaZnO field-effect transistor on a polyimide wire substrate for an electronic textile. Journal of the Korean Physical Society 68, 599–603 (2016). https://doi.org/10.3938/jkps.68.599

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  • DOI: https://doi.org/10.3938/jkps.68.599

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