Skip to main content
SpringerLink
Log in

Relationship between threading dislocations and the optical properties in GaN-based LEDs on Si Substrates

  • Letters
  • Published:
Journal of the Korean Physical Society Aims and scope Submit manuscript

Abstract

Owing to the large lattice mismatch between Si and Al(Ga)N, GaN-based structures grown on Si(111) substrates usually have a high density of threading dislocations, which act as non-radiative recombination centers. In this work, we analyze the relationship between threading dislocations and the internal quantum efficiency of GaN-based light-emitting diodes (LEDs) by using various characterization methods such as atomic force microscopy, transmission electron microscopy, cathodoluminescence, photoluminescence, and electroluminescence measurements. Non-radiative recombination centers are found to have a direct effect on the optical properties of optoelectronics devices such as LEDs. Reducing the density of the threading dislocations is demonstrated to be a key parameter in improving the output power of LEDs grown on Si substrates.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. Dadgar et al., Thin Solid Films 515, 4356 (2007).

    Article  ADS  Google Scholar 

  2. E. F. Schubert and J. K. Kim, Science 308, 1274 (2005).

    Article  ADS  Google Scholar 

  3. G. Chen, M. Craven, A. Kim, A. Munkholm, S. Watanabe, M. Camras, W. Götz and F. Steranka, Phys. Status Solidi A 205, 1086 (2008).

    Article  ADS  Google Scholar 

  4. A. Laubsch, M. Sabathil, J. Baur, M. Peter and B. Hahn, IEEE Trans. Electron Devices 57, 79 (2010).

    Article  ADS  Google Scholar 

  5. Q. Dai et al., Appl. Phys. Lett. 94, 111109 (2009).

    Article  ADS  Google Scholar 

  6. S. Guha and N. A. Bojarczuk, Appl. Phys. Lett. 72, 415 (1998).

    Article  ADS  Google Scholar 

  7. C. A. Tran, A. Osinski, R. F. Karliceik, Jr. and I. Berishev, Appl. Phys. Lett. 75, 1494 (1999).

    Article  ADS  Google Scholar 

  8. E. Feltin, S. Dalmasso, P. Mierry, B. Beaumont, H. Lahrèche, A. Bouillé, H. Haas, M. Leroux and P. Gibart, Jpn. J. Appl. Phys. 40, L738 (2001).

    Article  ADS  Google Scholar 

  9. A. Dadgar, J. Christen, T. Riemann, S. Richter, J. Blasing, A. Diez, A. Krost, A. Alam and M. Heuken, Appl. Phys. Lett. 78, 2211 (2001).

    Article  ADS  Google Scholar 

  10. B. Monemar, in: J. I. Pankove, T. D. Moustakas (Eds.), Semiconductors and Semimetals, vol. 50 (Academic, San Diego, 1998), p. 326.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. LG Electronics Advanced Research Institute, Seoul, 06763, Korea

    K. S. Jeon

  2. Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea

    K. S. Jeon, S. -W. Kim & D. -H. Ko

  3. Department of Physics, Inha University, Incheon, 22212, Korea

    H. Y. Ryu

Authors
  1. K. S. Jeon
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. -W. Kim
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. D. -H. Ko
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Y. Ryu
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to H. Y. Ryu.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Jeon, K.S., Kim, S.W., Ko, D.H. et al. Relationship between threading dislocations and the optical properties in GaN-based LEDs on Si Substrates. Journal of the Korean Physical Society 67, 1085–1088 (2015). https://doi.org/10.3938/jkps.67.1085

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3938/jkps.67.1085

Keywords

Search

Navigation