Grain Growth Behaviors of Multicrystalline Silicon during Cold Crucible Continuous Casting

Feng Huang; Rui Run Chen; Jing Jie Guo; Hong Sheng Ding; Yan Qing Su; Jie Ren Yang; Heng Zhi Fu

doi:10.4028/www.scientific.net/AMM.117-119.398

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 117-119Grain Growth Behaviors of Multicrystalline Silicon...

Grain Growth Behaviors of Multicrystalline Silicon during Cold Crucible Continuous Casting

Abstract:

A square shaped silicon ingot was cast by cold crucible continuous casting. The grain growth behaviors during different growth stages were investigated. In the first, grains nucleate at the base surface in the centre and in the three phase junction at periphery, and then grow upwards and inclined upwards separately. In the second, grain grow competitively, two distinguished zones are formed. In the final, a cap is formed on the liquid free surface, and precipitates are present.

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Periodical:

Applied Mechanics and Materials (Volumes 117-119)

Pages:

398-401

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.117-119.398

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Cite this paper

Online since:

October 2011

Authors:

Feng Huang, Rui Run Chen, Jing Jie Guo, Hong Sheng Ding, Yan Qing Su, Jie Ren Yang, Heng Zhi Fu

Keywords:

Cold Crucible Continuous Casting, Grain Growth, Multicrystalline Silicon, Nucleation

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References

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