Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices

Chih Hao Wang; Liang Yu Su; Finella Lee; Jian Jang Huang

doi:10.4028/www.scientific.net/AMM.764-765.486

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 764-765Applications of GaN-Based High Electron Mobility...

Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices

Abstract:

We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the V_GS of the E-mode HEMT is over 9V, it still shows a good performance.

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Periodical:

Applied Mechanics and Materials (Volumes 764-765)

Pages:

486-490

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.764-765.486

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Online since:

May 2015

Authors:

Chih Hao Wang*, Liang Yu Su, Finella Lee, Jian Jang Huang

Keywords:

GaN on Si, High Electron Mobility Transistors (HEMTs), Power Device

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References

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