Effect of Bi Doping on the Thermoelectric Properties of Mg2Si0.5Sn0.5 Compound

Wei Jun Luo; Mei Jun Yang; Qiang Shen; Hong Yi Jiang; Lian Meng Zhang

doi:10.4028/www.scientific.net/AMR.66.33

Paper Titles

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Stoichiometric Controlling of Spark Plasma Sintered Boron-Carbon Ceramics
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Optimal Design for Ceramic Radomes with A-Sandwich Structure
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Effect of Bi Doping on the Thermoelectric Properties of Mg₂Si_0.5Sn_0.5 Compound
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Reinforcement of B₄C Ceramics with Multi-Walled Carbon Nanotubes
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Damping Properties and Mechanism of 0-3 PMN/CB/EP Composites
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 66Effect of Bi Doping on the Thermoelectric...

Effect of Bi Doping on the Thermoelectric Properties of Mg₂Si_0.5Sn_0.5 Compound

Abstract:

The single phase of Bi-doped Mg2Si0.5Sn0.5 compounds have been successfully fabricated by solid state reaction-spark plasma sintering (SPS). The effect of Bi doping concentration on the thermoelectric properties of Mg2Si0.5Sn0.5 is mainly investigated. The doping of Bi atom introduces impurity energy to Mg2Si0.5Sn0.5 compounds, which results in the increase of carrier concentration ( ), meanwhile it causes the increase of crystal distortion, enhancing the scatter of phonon. The results show that with the increasing of Bi doping content, the electrical conductivity (σ) increase, the absolute Seebeck coefficient ( ) and thermal conductivity ( ) decrease slightly in the measuring temperature range between 300 K and 800K. When the doping concentration of Bi is up to 2.5at% (nominal molar percent), the sample shows a maximum value of the figure of merit, ZT, is 0.78 at 800K.