Simulation of an AlGaN/GaN HEMT for Ka-Band

Xiao Bin Luo; Wei Hua Yu; De Chun Guo; Zhi Ming Wang

doi:10.4028/www.scientific.net/AMR.748.864

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 748Simulation of an AlGaN/GaN HEMT for Ka-Band

Simulation of an AlGaN/GaN HEMT for Ka-Band

Abstract:

A physical model of 0.24μm gate-length and 50μm gate-width AlGaN/GaN HEMTs is designed in the paper including lateral structure and longitudinal material parameters. Then DC and high frequency characteristics are both simulated and analyzed. The results show that the saturation drain current is 0.8A/mm at zero bias and the maximum transconductance is 350mS/mm. The current gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) are 35GHz and 107GHz respectively at -2V gate voltage and 25V drain voltage. The maximum available power gains (MAG) is 10.2dB at 40GHz. Therefore, the structure can be applied to Ka-band.

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Periodical:

Advanced Materials Research (Volume 748)

Pages:

864-867

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.748.864

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Online since:

August 2013

Authors:

Xiao Bin Luo, Wei Hua Yu, De Chun Guo, Zhi Ming Wang

Keywords:

AlGaN/GaN HEMTs, Ka-Band, Physical Model

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References

[1] Wang Dongfang, Yuan Tingting, Wei Ke, et al. Design and implementation of Ka-band AlGaN/GaN HEMTs[J]. Journal of Infrared and Millimeter Waves, 2011, 30(3): 255-259.

DOI: 10.3724/sp.j.1010.2011.00255

Google Scholar

[2] Liu Guoguo, Wei Ke, Huang Jun, et al. AlGaN/GaN HEMT with 200 GHz fmax on sapphire substrate with InGaN back-barrier[J]. Journal of Infrared and Millimeter Waves, 2011, 30(4): 289-292.

DOI: 10.3724/sp.j.1010.2011.00289

Google Scholar

[3] Yan Wei, Han Weihua, Zhang Renping, et al. Research progress on the process of AlGaN/GaN HEMTs[J]. Micronanoelectronic Technology, 2011, 48(2): 79-86.

Google Scholar

[4] Stefano R. and Aldo D. C. Influence of the Source–Gate Distance on the AlGaN/GaN HEMT Performance[J]. IEEE Transactions on Electron Devices, 2007, 54(5): 1071-1075.

DOI: 10.1109/ted.2007.894614

Google Scholar

[5] Farahmand M, et al. Monte Carlo Simulation of Electron Transport in the III-Nitride Wurtzite Phase Materials System: Binaries and Terniaries[J]. IEEE Transactions on Electron Devices, 2001, 48(3): 535-542.

DOI: 10.1109/16.906448

Google Scholar

[6] Mo Jianghui, Cai Shujun. Summarize for the Investigation of the Field-Plate Structure in GaN-Based HEMT[J]. Semiconductor Technology, 2006, 31(6): 401-405.

Google Scholar