Tunable Performance of P-Type Cu2O/SnO Bilayer Thin Film Transistors

H.A. Al-Jawhari; J.A. Caraveo-Frescas; M.N. Hedhili

doi:10.4028/www.scientific.net/AST.93.260

Paper Titles

Scanning Hall Probe Imaging of LaFe_13-xSi_x
p.219

Coherent Electronic Energy Transfer and Organic Photovoltaics
p.225

Morphological Study of CdSe Nanocrystals Passivated with a Low Band Gap Rod-Coil Diblock Copolymer for Hybrid Solar Cells
p.235

CuZnSnSe Nanotubes and Nanowires by Template Electrosynthesis
p.241

Effect of Temperature on Phase Transition of Ni-Co Oxide and its Application on Optoelectronics
p.247

Several Approaches to Bipolar Oxide Diodes with High Rectification
p.252

Tunable Performance of P-Type Cu₂O/SnO Bilayer Thin Film Transistors
p.260

A Monolithic White-Light LED Based on GaN Doped with Be
p.264

InGaN/GaN Quantum Dot and Nanowire LEDs and Lasers
p.270

HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 93Tunable Performance of P-Type Cu2O/SnO Bilayer...

Tunable Performance of P-Type Cu₂O/SnO Bilayer Thin Film Transistors

Abstract:

Novel tunable p-type thin film transistors (TFTs) were developed by adopting Cu₂O/SnO bilayer channel scheme. Using Cu₂O film produced at a relative oxygen partial pressure O_pp of 10% - as an upper layer - and 3% O_pp SnO films - as lower layers - we built a matrix of bottom gate Cu₂O/SnO bilayer TFTs with different thicknesses. We found that the thickness of the Cu₂O layer plays a major role in the oxidization process exerted onto the SnO layer underneath. The thicker the Cu₂O layer the more the underlying SnO layer is oxidized, and hence, the more the transistor mobility is enhanced at a certain temperature. Both the device performance and the required annealing temperature could then be tuned by controlling the thickness of each layer of the Cu₂O/SnO bilayer TFT.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advances in Science and Technology (Volume 93)

Pages:

260-263

DOI:

https://doi.org/10.4028/www.scientific.net/AST.93.260

Citation:

Cite this paper

Online since:

October 2014

Authors:

H.A. Al-Jawhari*, J.A. Caraveo-Frescas, M.N. Hedhili

Keywords:

Cu₂O/SnO TFT, P-Type TFTs, Transparent Bilayer TFT

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

* - Corresponding Author

References

[1] Fortunato, E., P. Barquinha, and R. Martins, Oxide semiconductor thin-film transistors: a review of recent advances. Adv. Mater., 2012. 24(22): pp.2945-2986.

DOI: 10.1002/adma.201103228

Google Scholar

[2] Ogo, Y., et al., p-channel thin-film transistor using p-type oxide semiconductor, SnO. Appl. Phys. Lett., 2008. 93(3): pp.032113-3.

DOI: 10.1063/1.2964197

Google Scholar

[3] Yabuta, H., et al., Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits. Appl. Phys. Lett., 2010. 97(7): pp.072111-3.

DOI: 10.1063/1.3478213

Google Scholar

[4] Martins, R., et al., P-type oxide-based thin film transistors produced at low temperatures. Proc. of SPIE 2012. 8263: pp.826315-15.

Google Scholar

[5] Caraveo-Frescas, J.A., et al., Record Mobility in Transparent p-type Tin Monoxide Films and Devices by Phase Engineering. ACS Nano, 2013. 7 (6): pp.5160-5167.

DOI: 10.1021/nn400852r

Google Scholar

[6] Al-Jawhari, H.A., et al., P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures. ASC Appl. Mater. Interfaces, 2013. 5(19): pp.9615-9619.

DOI: 10.1021/am402542j

Google Scholar

[7] Barreca, D., A. Gasparotto, and E. Tondello, CVD Cu2O and CuO Nanosystems Characterized by XPS. Surf. Sci. Spect., 2007. 14(1): pp.41-52.

DOI: 10.1116/11.20080701

Google Scholar

[8] Poulston, S., et al., Surface Oxidation and Reduction of CuO and Cu2O Studied Using XPS and XAES. Surf. Interface Anal. , 1996. 24(12): p.811–820.

DOI: 10.1002/(sici)1096-9918(199611)24:12<811::aid-sia191>3.0.co;2-z

Google Scholar

[9] Pan, X.Q. and L. Fu, Oxidation and phase transitions of epitaxial tin oxide thin films on (1̄012) sapphire. J. Appl. Phys., 2001. 89(11): pp.6048-6055.

DOI: 10.1063/1.1368865

Google Scholar