Synthesis and Characterization of Ce-Doped BZT Thin Films Deposited by a RF Magnetron Sputtering Method

Won Seok Choi; Young Park; Jin Hyo Boo; Junsin Yi; Byung You Hong

doi:10.4028/www.scientific.net/KEM.321-323.1336

Paper Titles

Luminance Change Method for Cure Monitoring of GFRP
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Effect of SiO₂ Cap Layer on Thermal Stability of Nickel and Nickel-Cobalt Silicide
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Nondestructive Evaluation of Corrosion Progression on Titanium and Its Alloy Surface by Wetting Method
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Measurement of Carboxyl Group Separated from a Thin Film Copolymerized by Low-Temperature Plasma at Atmospheric Pressure of C₂H₂ and CO₂
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Synthesis and Characterization of Ce-Doped BZT Thin Films Deposited by a RF Magnetron Sputtering Method
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Evaluation of Recovery Process of Pure Magnesium at Room Temperature By Acoustic Emission
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Transition of Friction and Wear by Stick-Slip Phenomenon in Various Environments under Fretting Conditions
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Residual Stress Measurement and Evaluation on Ceramics with X-Ray and Indentation Method
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FE Analysis of Thermoelectric Cooler Using Bi-Te-Sb Compound Alloy
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Synthesis and Characterization of Ce-Doped BZT Thin Films Deposited by a RF Magnetron Sputtering Method

Abstract:

We investigated the structural and electrical properties of the 0.5% Ce-doped Ba(ZrxTi1-x)O3 (BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm for the MLCC (Multilayer Ceramic Capacitor) application. Ce-doped BZT films were prepared on Pt/Ti/SiO2/Si substrates by a RF magnetron sputtering system as a function of Ar/O2 ratio and substrate temperature. X-ray diffraction patterns were recorded for the samples deposited with three different substrate temperatures. The thickness and the surface roughness of the films deposited with different Ar/O2 ratios were measured. The oxygen gas, which was introduced during the film deposition, had an influence on the growth rate and the roughness of the film. The surface roughness and dielectric constant of the Ce-doped BZT film varied with Ar to O2 ratios (5:1, 2:1, and 1:1) from 1.21 nm to 2.33 nm and 84 to 149, respectively. The Ce-doped BZT film deposited at lower temperature has small leakage current and higher breakdown voltage.