Optimal Design and Simulation of a Cross-Plane Micro-Thermoelectric Generator

Xiao Liang Zhu; De Sheng Li; Ben Dong Liu; Jiang Zhe

doi:10.4028/www.scientific.net/KEM.503.240

Paper Titles

Simulation of Injection Molding of Ultra-Thin Light Guide Plate with Hemispherical Microstructures
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Design of a MEMS Broadband Microstrip Patch Antenna Based on Minkowski Fractal Boundary
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Investigation on Transmittance and Uniformity of Light Diffuser Plate of Scattering Optical Transmission Polymer
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Analytical Model of Fluxgate System
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Optimal Design and Simulation of a Cross-Plane Micro-Thermoelectric Generator
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Eliminating the External Libration Sound for the Optical Microsphere-Taper Coupling Structure
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Development of a Portable Phosphate Detection System Using Cobalt Based Microelectrodes
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Effect of Micro Structures of Diffusers on Optical Properties of LED Light
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A Refined Arnoldi Algorithm Based Krylov Subspace Technique for MEMS Model Order Reduction
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 503Optimal Design and Simulation of a Cross-Plane...

Optimal Design and Simulation of a Cross-Plane Micro-Thermoelectric Generator

Abstract:

This paper presents a new way to design a low-cost micro-thermoelectric generator (μ-TEG) which can be fabricated by using electrochemical and MEMS technology. The overall dimension of the μ-TEG is about 13mm × 13mm × 0.4mm, which contains 128 p- and n-type pairs of semiconductors connected electrically in series and thermally in parallel. The p-type antimony telluride (Sb2Te3) and n-type bismuth telluride (Bi2Te3) with an optimal thickness of 20μm were designed to deposit in a flexible polymer mold formed by photolithographic patterning of Polyimide (PI) with a three electrode configuration. Simulations of the thermocouple with PI mold were carried on, using finite element analysis. The analysis shows the possibility to achieve 3.5 mV while the difference in temperature is 10K and the thickness of the silicon substrate is 400μm, which reveals that the output power of the thermocouple without releasing process is only 4% lower than the one with the releasing process. Therefore the PI mold is not removed, considering the potential for easier fabrication and lower cost. The deposition parameters were also studied and optimized for the best thermoelectric performance. In our experiments, the n- and p-type semiconductors could be obtained when the voltage and current are around 50mV versus saturated calomel electrode (SCE) and 40 mA, respectively.

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Periodical:

Key Engineering Materials (Volume 503)

Pages:

240-243

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.503.240

Citation:

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Online since:

February 2012

Authors:

Xiao Liang Zhu, De Sheng Li, Ben Dong Liu, Jiang Zhe

Keywords:

ANSYS, Cross-Plane, MEMS, Micro-Thermoelectric Generator, Seebeck Effect

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References

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