Exciton Tunneling Tuned by a Magnetic Field in Asymmetric Double Quantum Wells Based on CdTe
p.121
p.121
Ultrafast Dynamics of Charge Carriers in ZnSe-Based II-VI Quantum Wells and Epilayers
p.127
p.127
Optical Properties and Electronic Structure of ZnSe-Based Heterostructures Grown by Low Temperature MOVPE
p.133
p.133
Characterisation of II-Vi Structures by Raman Spectroscopy
p.141
p.141
Critical Thickness Determination of II-VI Semiconductors by Rheed and X-Ray Diffraction
p.147
p.147
Dislocation and Strain Distributions in CdTe/GaAs (001) Epilayers
p.151
p.151
On the Mechanism of RHEED Oscillations in Molecular Beam Epitaxy of II-VI Compounds
p.155
p.155
Comparison of the Structural Properties of Epitaxial ZnSe Layers Grown on GaAs (001) by MOVPE Using Different Selenium Precursors
p.159
p.159
3-D Mapping of Strain and Defects in a ZnSE Epilayer Using a Variable Energy Electron Beam
p.163
p.163
Critical Thickness Determination of II-VI Semiconductors by Rheed and X-Ray Diffraction
Abstract:
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Periodical:
Materials Science Forum (Volumes 182-184)
Pages:
147-150
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Online since:
February 1995
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