Sublimation Growth of Bulk β-SiC Crystals on (100) and (111) β-SiC Substrates
p.77
p.77
SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor
p.83
p.83
Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications
p.89
p.89
Growth and Characterisation of SiC Power Device Material
p.97
p.97
Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
p.103
p.103
Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition
p.107
p.107
Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence
p.111
p.111
Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC
p.115
p.115
Boron Compensation of 6H Silicon Carbide
p.119
p.119
Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
103-106
Citation:
Online since:
February 1998
Keywords:
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