Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPE
p.1425
p.1425
Electroluminescence of GaN pn Diodes
p.1429
p.1429
Ultraviolet Stimulated Emission in GaN/AlGaN Multiple Quantum Wells
p.1433
p.1433
An Investigation of Breakdown Mechanisms in Al(GaN) MSM Photodetectors
p.1437
p.1437
High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures
p.1441
p.1441
Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates
p.1445
p.1445
Two-Dimensional Electronic Transport in AlGaN/GaN Heterostructures
p.1449
p.1449
Annealed Si1-xCx Emitter Silicon Heterojunction Bipolar Transistors
p.1455
p.1455
Ultraviolet Excitonic Laser Action at Room Temperature in ZnO Nanocrystalline Epitaxial Films
p.1459
p.1459
High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
1441-1444
Citation:
Online since:
February 1998
Authors:
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