Sponsors and Committees
p.4
p.4
Preface
p.7
p.7
High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
p.9
p.9
Sublimation Growth of 50mm Diameter SiC Wafers
p.13
p.13
Experimental Investigation of 4H-SiC Bulk Crystal Growth
p.17
p.17
Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method
p.21
p.21
Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC
p.25
p.25
X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals
p.29
p.29
Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
p.33
p.33
Experimental Investigation of 4H-SiC Bulk Crystal Growth
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
17-20
Citation:
Online since:
February 1998
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