X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals
p.29
p.29
Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
p.33
p.33
The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth
p.37
p.37
Defect Formation Mechanism of Bulk SiC
p.41
p.41
Enlargement of SiC Crystals: Defect Formation at the Interfaces
p.45
p.45
Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC
p.49
p.49
Optically Transparent 6H-Silicon Carbide
p.53
p.53
Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification
p.57
p.57
Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container
p.61
p.61
Enlargement of SiC Crystals: Defect Formation at the Interfaces
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
45-48
Citation:
Online since:
February 1998
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